Pedro Miguel Cândido Barquinha
AuthID: R-000-EY1
91
TITLE: A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress Full Text
AUTHORS: Niang, KM; Barquinha, PMC; Martins, RFP; Cobb, B; Powell, MJ; Flewitt, AJ;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 9
AUTHORS: Niang, KM; Barquinha, PMC; Martins, RFP; Cobb, B; Powell, MJ; Flewitt, AJ;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 9
92
TITLE: InGaZnO TFT behavioral model for IC design Full Text
AUTHORS: Pydi Bahubalindrun ; Vitor Tavares ; Pedro Barquinha; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, VOLUME: 87, ISSUE: 1
AUTHORS: Pydi Bahubalindrun ; Vitor Tavares ; Pedro Barquinha; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, VOLUME: 87, ISSUE: 1
93
TITLE: TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
AUTHORS: Jorge Martins; Pedro Barquinha; Joao Goes;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTHORS: Jorge Martins; Pedro Barquinha; Joao Goes;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
94
TITLE: Electrochemical Transistor Based on Tungsten Oxide with Optoelectronic Properties
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
95
TITLE: Oxide TFTs on Flexible Substrates for Designing and Fabricating Analog-to-Digital Converters
AUTHORS: Ana Correia; Joao Goes; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTHORS: Ana Correia; Joao Goes; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
96
TITLE: InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, ISSUE: 4
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, ISSUE: 4
97
TITLE: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: Applied Surface Science, VOLUME: 379
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: Applied Surface Science, VOLUME: 379
98
TITLE: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
INDEXED IN: 
WOS
WOS99
TITLE: Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance Full Text
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
100
TITLE: Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
AUTHORS: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato; Rodrigo Martins; Beatrice Fraboni;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 7
AUTHORS: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato; Rodrigo Martins; Beatrice Fraboni;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 7
