111
TITLE: Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress  Full Text
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira ; Elvira Fortunato ; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
112
TITLE: Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films  Full Text
AUTHORS: Haeberle, J; Machulik, S; Janowitz, C; Manzke, R; Gaspar, D; Barquinha, P; Schmeisser, D;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
113
TITLE: Transistors: Solid State Electrochemical WO3 Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016)
AUTHORS: Grey, P; Pereira, L ; Pereira, S; Barquinha, P; Cunha, I; Martins, R; Fortunato, E ;
PUBLISHED: 2016, SOURCE: Advanced Electronic Materials, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus CrossRef
IN MY: ORCID
114
TITLE: Solid State Electrochemical WO3 Transistors with High Current Modulation
AUTHORS: Paul Grey; Luis Pereira ; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato ;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
115
TITLE: The 2016 oxide electronic materials and oxide interfaces roadmap  Full Text
AUTHORS: Lorenz, M; Rao, MSR; Venkatesan, T; Fortunato, E; Barquinha, P; Branquinho, R; Salgueiro, D; Martins, R; Carlos, E; Liu, A; Shan, FK; Grundmann, M; Boschker, H; Mukherjee, J; Priyadarshini, M; DasGupta, N; Rogers, DJ; Teherani, FH; Sandana, EV; Bove, P; Rietwyk, K; Zaban, A; Veziridis, A; Weidenkaff, A; Muralidhar, M; Murakami, M; Abel, S; Fompeyrine, J; Zuniga Perez, J; Ramesh, R; Spaldin, NA; Ostanin, S; Borisov, V; Mertig, I; Lazenka, V; Srinivasan, G; Prellier, W; Uchida, M; Kawasaki, M; Pentcheva, R; Gegenwart, P; Granozio, FM; Fontcuberta, J; Pryds, N; ...More
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 43
INDEXED IN: Scopus WOS CrossRef: 268
IN MY: ORCID
116
TITLE: A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors  Full Text
AUTHORS: Moldovan, O; Castro Carranza, A; Cerdeira, A; Estrada, M; Barquinha, P; Martins, R; Fortunato, E ; Miljakovic, S; Iniguez, B;
PUBLISHED: 2016, SOURCE: SOLID-STATE ELECTRONICS, VOLUME: 126
INDEXED IN: Scopus WOS CrossRef: 25
IN MY: ORCID
117
TITLE: A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals
AUTHORS: Haeberle, J; Brizzi, S; Gaspar, D; Barquinha, P; Galazka, Z; Schulz, D; Schmeisser, D;
PUBLISHED: 2016, SOURCE: MATERIALS RESEARCH EXPRESS, VOLUME: 3, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 9
IN MY: ORCID
118
TITLE: Photocatalytic behavior of TiO2 films synthesized by microwave irradiation  Full Text
AUTHORS: Nunes, D; Pimentel, A; Pinto, JV; Calmeiro, TR; Nandy, S; Barquinha, P; Pereira, L ; Carvalho, PA; Fortunato, E ; Martins, R;
PUBLISHED: 2016, SOURCE: CATALYSIS TODAY, VOLUME: 278
INDEXED IN: Scopus WOS CrossRef: 38
IN MY: ORCID
119
TITLE: UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors
AUTHORS: Carlos, E; Branquinho, R; Kiazadeh, A; Barquinha, P; Martins, R; Fortunato, E ;
PUBLISHED: 2016, SOURCE: ACS APPLIED MATERIALS & INTERFACES, VOLUME: 8, ISSUE: 45
INDEXED IN: Scopus WOS CrossRef: 62
IN MY: ORCID
120
TITLE: A High-Gain, High-Speed Parametric Residue Amplifier for SAR-Assisted Pipeline ADCs
AUTHORS: Pydi Ganga Bahubalindruni; Joao Goes; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
INDEXED IN: WOS
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