Pedro Miguel Cândido Barquinha
AuthID: R-000-EY1
161
TITLE: P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs
AUTHORS: Barquinha, P; Pereira, L; Goncalves, G; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Digest of Technical Papers - SID International Symposium, VOLUME: 41 1
AUTHORS: Barquinha, P; Pereira, L; Goncalves, G; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Digest of Technical Papers - SID International Symposium, VOLUME: 41 1
INDEXED IN: 
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ORCID
ORCID162
TITLE: Erratum: “Thin-film transistors based on p-type Cu[sub 2]O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)] Full Text
AUTHORS: Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
AUTHORS: Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
163
TITLE: <title>Floating gate memory paper transistor</title>
AUTHORS: Martins, R; Pereira, L; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
AUTHORS: Martins, R; Pereira, L; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
164
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
165
TITLE: Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
166
TITLE: <title>Paper field effect transistor</title>
AUTHORS: Fortunato, E; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
AUTHORS: Fortunato, E; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
167
TITLE: <title>Zinc oxide and related compounds: order within the disorder</title>
AUTHORS: Martins, R; Luisa Pereira; Barquinha, P; Ferreira, I; Prabakaran, R; Goncalves, G; Goncalves, A; Fortunato, E;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
AUTHORS: Martins, R; Luisa Pereira; Barquinha, P; Ferreira, I; Prabakaran, R; Goncalves, G; Goncalves, A; Fortunato, E;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
168
TITLE: Self-sustained n-type memory transistor devices based on natural cellulose paper fibers
AUTHORS: Rodrigo Martins; Luís Pereira; Pedro Barquinha; Nuno Correia; Gonçalo Gonçalves; Isabel Ferreira; Carlos Dias; Correia N.; Dionísio M.; Silva M.; Elvira Fortunato;
PUBLISHED: 2009, SOURCE: Journal of Information Display, VOLUME: 10, ISSUE: 4
AUTHORS: Rodrigo Martins; Luís Pereira; Pedro Barquinha; Nuno Correia; Gonçalo Gonçalves; Isabel Ferreira; Carlos Dias; Correia N.; Dionísio M.; Silva M.; Elvira Fortunato;
PUBLISHED: 2009, SOURCE: Journal of Information Display, VOLUME: 10, ISSUE: 4
169
TITLE: High mobility indium free amorphous oxide based thin film transistors
AUTHORS: Fortunato, E; Pereira, L; Barquinha, P; Botelho Do Rego, A; Gongalves, G; Vila, A; Morante, J; Martins, R;
PUBLISHED: 2008, SOURCE: 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 in Proceedings of International Meeting on Information Display, VOLUME: 8
AUTHORS: Fortunato, E; Pereira, L; Barquinha, P; Botelho Do Rego, A; Gongalves, G; Vila, A; Morante, J; Martins, R;
PUBLISHED: 2008, SOURCE: 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 in Proceedings of International Meeting on Information Display, VOLUME: 8
INDEXED IN: Scopus
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ORCID170
TITLE: Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications Full Text
AUTHORS: FORTUNATO, E; RANIERO, L; SILVA, L; GONCALVES, A; PIMENTEL, A; BARQUINHA, P; AGUAS, H; PEREIRA, L; GONCALVES, G; FERREIRA, I;
PUBLISHED: 2008, SOURCE: Solar Energy Materials and Solar Cells, VOLUME: 92, ISSUE: 12
AUTHORS: FORTUNATO, E; RANIERO, L; SILVA, L; GONCALVES, A; PIMENTEL, A; BARQUINHA, P; AGUAS, H; PEREIRA, L; GONCALVES, G; FERREIRA, I;
PUBLISHED: 2008, SOURCE: Solar Energy Materials and Solar Cells, VOLUME: 92, ISSUE: 12
