161
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Goncalves, G; Barquinha, P; Pereira, L ; Franco, N; Alves, E ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 13, ISSUE: 1
INDEXED IN: WOS
IN MY: ORCID
162
TITLE: P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs  Full Text
AUTHORS: Barquinha, P; Pereira, L ; Goncalves, G; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, VOLUME: 3, ISSUE: 1
INDEXED IN: Scopus CrossRef: 2
IN MY: ORCID
163
TITLE: P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs
AUTHORS: Barquinha, P; Pereira, L ; Goncalves, G; Martins, R; Fortunato, E ;
PUBLISHED: 2010, SOURCE: Digest of Technical Papers - SID International Symposium, VOLUME: 41 1
INDEXED IN: Scopus
IN MY: ORCID
164
TITLE: Erratum: “Thin-film transistors based on p-type Cu[sub 2]O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]  Full Text
AUTHORS: Elvira Fortunato ; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
INDEXED IN: CrossRef
IN MY: ORCID
165
TITLE: <title>Floating gate memory paper transistor</title>
AUTHORS: Martins, R; Pereira, L ; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E ;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
INDEXED IN: CrossRef
IN MY: ORCID
166
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L ; Franco, N; Alves, E ; Martins, R; Fortunato, E ;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
INDEXED IN: CrossRef
IN MY: ORCID
167
TITLE: Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
168
TITLE: <title>Paper field effect transistor</title>
AUTHORS: Fortunato, E ; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira ; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
INDEXED IN: CrossRef
IN MY: ORCID
169
TITLE: <title>Zinc oxide and related compounds: order within the disorder</title>
AUTHORS: Martins, R; Luisa Pereira ; Barquinha, P; Ferreira, I; Prabakaran, R; Goncalves, G; Goncalves, A; Fortunato, E ;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
INDEXED IN: CrossRef
IN MY: ORCID
170
TITLE: Self-sustained n-type memory transistor devices based on natural cellulose paper fibers
AUTHORS: Rodrigo Martins; Luís Pereira ; Pedro Barquinha; Nuno Correia; Gonçalo Gonçalves; Isabel Ferreira; Carlos Dias; Correia N.; Dionísio M.; Silva M. ; Elvira Fortunato ;
PUBLISHED: 2009, SOURCE: Journal of Information Display, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus CrossRef: 7
IN MY: ORCID
Page 17 of 18. Total results: 175.