ProfileOfResearchers

TITLE: Li-defect reactions during low dose ion implantation of Li-8 into ZnSe single crystals
AUTHORS: Restle, M; Dalmer, M; Wahl, U; Hofsass, H;
PUBLISHED: 1999, SOURCE: Symposium on Microstructural Processes in Irradiated Materials, at the 1998 Fall MRS Meeting in MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, VOLUME: 540

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TITLE: The influence of oxygen on the lattice sites of rare earths in silicon
AUTHORS: Wahl, U; Vantomme, A; Langouche, G; Correia, JG;
PUBLISHED: 1999, SOURCE: Symposium B on Light Emission from Silicon - Progress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, VOLUME: 77

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TITLE: Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111) Full Text
AUTHORS: Vantomme, A; Wu, MF; Hogg, S; Wahl, U; Deweerd, W; Pattyn, H; Langouche, G; Jin, S; Bender, H;
PUBLISHED: 1999, SOURCE: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 147, ISSUE: 1-4

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TITLE: Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe Full Text
AUTHORS: Bharuth Ram, K; Restle, M; Hofsass, H; Ronning, C; Wahl, U;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4

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TITLE: Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe Full Text
AUTHORS: Bharuth Ram, K; Hofsass, H; Restle, M; Wahl, U;
PUBLISHED: 1999, SOURCE: International Conference on Swift Heavy Ions in Materials Engineering and Characterization in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 156, ISSUE: 1-4

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TITLE: Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe Full Text
AUTHORS: Bharuth-Ram, K; Hofsäss, H; Restle, M; Wahl, U;
PUBLISHED: 1999, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 156, ISSUE: 1-4

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TITLE: Lattice location of implanted Cu in Si Full Text
AUTHORS: Wahl, U; J.G Correia; Vantomme, A; Langouche, G;
PUBLISHED: 1999, SOURCE: Physica B: Condensed Matter, VOLUME: 273-274

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TITLE: Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe Full Text
AUTHORS: Bharuth-Ram, K; Restle, M; Hofsäss, H; Ronning, C; Wahl, U;
PUBLISHED: 1999, SOURCE: Physica B: Condensed Matter, VOLUME: 273-274

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TITLE: Lattice sites and stability of implanted Er in FZ and CZ Si
AUTHORS: Wahl, U; Correia, JG ; Langouche, G; Vantomme, A;
PUBLISHED: 1998, SOURCE: Symposium on Materials and Devices for Silicon-Based Optoelectronics, at the 1997 MRS Fall Meeting in MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, VOLUME: 486

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