Nuno Pedro Serras Lucas Nobre Franco
AuthID: R-000-KNV
151
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001) Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
INDEXED IN: 
Scopus 
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ORCID
ORCID152
TITLE: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
153
TITLE: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
154
TITLE: Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)] Full Text
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
155
TITLE: RBS analysis of MBE grown SiGe/(001)Si heterostructures with thin high Ge content SiGe channels for HMOS transistors Full Text
AUTHORS: Barradas, NP ; Sequeira, AD; Franco, N; Myronov, M; Mironov, OA; Phillips, PJ; Parker, EHC;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
AUTHORS: Barradas, NP ; Sequeira, AD; Franco, N; Myronov, M; Mironov, OA; Phillips, PJ; Parker, EHC;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID
ORCID156
TITLE: Depth resolved studies of indium content and strain in InGaN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
157
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 10
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 10
158
TITLE: Fe ion implantation in GaN: Damage, annealing, and lattice site location Full Text
AUTHORS: Liu, C; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 90, ISSUE: 1
AUTHORS: Liu, C; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 90, ISSUE: 1
159
TITLE: Amorphization of GaN by ion implantation Full Text
AUTHORS: Liu, C; Wenzel, A; Rauschenbach, B; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Fan, XJ;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
AUTHORS: Liu, C; Wenzel, A; Rauschenbach, B; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Fan, XJ;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
160
TITLE: Coherent amorphization of Ge/Si multilayers with ion beams Full Text
AUTHORS: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
AUTHORS: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
