Radheshyam Rai
AuthID: R-000-NEM
141
TITLE: Treatment of pregnant patients with antiphospholipid syndrome
AUTHORS: Tincani, A; Branch, W; Levy, RA; Piette, JC; Carp, H; Rai, RS; Khamashta, M; Shoenfeld, Y;
PUBLISHED: 2003, SOURCE: LUPUS, VOLUME: 12, ISSUE: 7
AUTHORS: Tincani, A; Branch, W; Levy, RA; Piette, JC; Carp, H; Rai, RS; Khamashta, M; Shoenfeld, Y;
PUBLISHED: 2003, SOURCE: LUPUS, VOLUME: 12, ISSUE: 7
142
TITLE: Physical and electrical properties of metal gate electrodes on HfO<sub>2</sub> gate dielectrics
AUTHORS: Schaeffer, JK; Samavedam, SB; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; White, BE; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Garcia, R; Roan, D; Kottke, M; Gregory, RB;
PUBLISHED: 2003, SOURCE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, VOLUME: 21, ISSUE: 1
AUTHORS: Schaeffer, JK; Samavedam, SB; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; White, BE; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Garcia, R; Roan, D; Kottke, M; Gregory, RB;
PUBLISHED: 2003, SOURCE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, VOLUME: 21, ISSUE: 1
143
TITLE: HfO<sub>2</sub> gate dielectrics deposited via tetrakis diethylamido hafnium
AUTHORS: Schaeffer, J; Edwards, NV; Liu, R; Roan, D; Hradsky, B; Gregory, R; Kulik, J; Duda, E; Contreras, L; Christiansen, J; Zollner, S; Tobin, P; Nguyen, BY; Nieh, R; Ramon, M; Rao, R; Hegde, R; Rai, R; Baker, J; Voight, S;
PUBLISHED: 2003, SOURCE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 150, ISSUE: 4
AUTHORS: Schaeffer, J; Edwards, NV; Liu, R; Roan, D; Hradsky, B; Gregory, R; Kulik, J; Duda, E; Contreras, L; Christiansen, J; Zollner, S; Tobin, P; Nguyen, BY; Nieh, R; Ramon, M; Rao, R; Hegde, R; Rai, R; Baker, J; Voight, S;
PUBLISHED: 2003, SOURCE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 150, ISSUE: 4
144
TITLE: Compatibility of silicon gates with hafnium-based gate dielectrics
AUTHORS: Gilmer, DC; Hegde, R; Cotton, R; Smith, J; Dip, L; Garcia, R; Dhandapani, V; Triyoso, D; Roan, D; Franke, A; Rai, R; Prabhu, L; Hobbs, C; Grant, JM; La, L; Samavedam, S; Taylor, B; Tseng, H; Tobin, P;
PUBLISHED: 2003, SOURCE: MICROELECTRONIC ENGINEERING, VOLUME: 69, ISSUE: 2-4
AUTHORS: Gilmer, DC; Hegde, R; Cotton, R; Smith, J; Dip, L; Garcia, R; Dhandapani, V; Triyoso, D; Roan, D; Franke, A; Rai, R; Prabhu, L; Hobbs, C; Grant, JM; La, L; Samavedam, S; Taylor, B; Tseng, H; Tobin, P;
PUBLISHED: 2003, SOURCE: MICROELECTRONIC ENGINEERING, VOLUME: 69, ISSUE: 2-4
145
TITLE: Ferroelectric phase transition in calcium tellurite ceramics
AUTHORS: Rai, R; Sharma, S; Choudhary, RNP;
PUBLISHED: 2002, SOURCE: Journal of Materials Science Letters, VOLUME: 21, ISSUE: 4
AUTHORS: Rai, R; Sharma, S; Choudhary, RNP;
PUBLISHED: 2002, SOURCE: Journal of Materials Science Letters, VOLUME: 21, ISSUE: 4
146
TITLE: Structural and electrical properties of magnesium tellurite ceramics Full Text
AUTHORS: Rai, RS; Sharma, S; Choudhary, RNP;
PUBLISHED: 2002, SOURCE: Ferroelectrics, VOLUME: 275, ISSUE: 1
AUTHORS: Rai, RS; Sharma, S; Choudhary, RNP;
PUBLISHED: 2002, SOURCE: Ferroelectrics, VOLUME: 275, ISSUE: 1
147
TITLE: Malignant Leydig cell tumour of the testis
AUTHORS: Powari, M; Kakkar, N; Singh, SK; Rai, RS; Jogai, S;
PUBLISHED: 2002, SOURCE: UROLOGIA INTERNATIONALIS, VOLUME: 68, ISSUE: 1
AUTHORS: Powari, M; Kakkar, N; Singh, SK; Rai, RS; Jogai, S;
PUBLISHED: 2002, SOURCE: UROLOGIA INTERNATIONALIS, VOLUME: 68, ISSUE: 1
148
TITLE: Evaluation of candidate metals for dual-metal gate CMOS with HfO<sub>2</sub> gate dielectric
AUTHORS: Samavedam, SB; Schaeffer, JK; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Gregory, RB;
PUBLISHED: 2002, SOURCE: SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, VOLUME: 716
AUTHORS: Samavedam, SB; Schaeffer, JK; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Gregory, RB;
PUBLISHED: 2002, SOURCE: SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, VOLUME: 716
INDEXED IN: 
WOS
WOS IN MY: 
ORCID
ORCID149
TITLE: Theoretical and experimental investigation of thermal stability of HfO<sub>2</sub>/Si and HfO<sub>2</sub>/SiO<sub>2</sub> interfaces
AUTHORS: Liu, CL; Stoker, M; Hegde, RI; Rai, RS; Tobin, PJ;
PUBLISHED: 2002, SOURCE: MODELING AND NUMERICAL SIMULATION OF MATERIALS BEHAVIOR AND EVOLUTION, VOLUME: 731
AUTHORS: Liu, CL; Stoker, M; Hegde, RI; Rai, RS; Tobin, PJ;
PUBLISHED: 2002, SOURCE: MODELING AND NUMERICAL SIMULATION OF MATERIALS BEHAVIOR AND EVOLUTION, VOLUME: 731
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID150
TITLE: Growth and characterization of K<sub>2</sub>Cr<sub>2</sub>O<sub>7</sub> doped PbI<sub>2</sub> single crystal
AUTHORS: Kumar, S; Momeen; Khan, MY; Rai, R;
PUBLISHED: 2002, SOURCE: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, VOLUME: 4746
AUTHORS: Kumar, S; Momeen; Khan, MY; Rai, R;
PUBLISHED: 2002, SOURCE: PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, VOLUME: 4746
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID