Nebiha Ben Sedrine
AuthID: R-000-XEG
41
TITLE: Y x Al 1− x N thin films Full Text
AUTHORS: Agnė Žukauskaitė; Christopher Tholander; Justinas Palisaitis; Per O Å Persson; Vanya Darakchieva; Nebiha Ben Sedrine; Ferenc Tasnádi; Björn Alling; Jens Birch; Lars Hultman;
PUBLISHED: 2012, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 45, ISSUE: 42
AUTHORS: Agnė Žukauskaitė; Christopher Tholander; Justinas Palisaitis; Per O Å Persson; Vanya Darakchieva; Nebiha Ben Sedrine; Ferenc Tasnádi; Björn Alling; Jens Birch; Lars Hultman;
PUBLISHED: 2012, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 45, ISSUE: 42
INDEXED IN: 
CrossRef
CrossRef42
TITLE: Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
AUTHORS: Stefan Schöche; Tino Hofmann; Nebiha Ben Sedrine; Vanya Darakchieva; Xinqiang Wang; Akihiko Yoshikawa; Mathias Schubert;
PUBLISHED: 2012, SOURCE: MRS Proc. - MRS Proceedings, VOLUME: 1396
AUTHORS: Stefan Schöche; Tino Hofmann; Nebiha Ben Sedrine; Vanya Darakchieva; Xinqiang Wang; Akihiko Yoshikawa; Mathias Schubert;
PUBLISHED: 2012, SOURCE: MRS Proc. - MRS Proceedings, VOLUME: 1396
INDEXED IN: CrossRef
CrossRef43
TITLE: Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry Full Text
AUTHORS: Ben Sedrine, N; Bouhafs, C; Schubert, M; Harmand, JC; Chtourou, R; Darakchieva, V;
PUBLISHED: 2011, SOURCE: 5th International Conference on Spectroscopic Ellipsometry in THIN SOLID FILMS, VOLUME: 519, ISSUE: 9
AUTHORS: Ben Sedrine, N; Bouhafs, C; Schubert, M; Harmand, JC; Chtourou, R; Darakchieva, V;
PUBLISHED: 2011, SOURCE: 5th International Conference on Spectroscopic Ellipsometry in THIN SOLID FILMS, VOLUME: 519, ISSUE: 9
44
TITLE: Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry Full Text
AUTHORS: Ben Sedrine, N; Darakchieva, V; Lindgren, D; Monemar, B; Che, SB; Ishitani, Y; Yoshikawa, A;
PUBLISHED: 2011, SOURCE: 3rd International Symposium on Growth of III-Nitrides (ISGN) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, VOLUME: 8, ISSUE: 5
AUTHORS: Ben Sedrine, N; Darakchieva, V; Lindgren, D; Monemar, B; Che, SB; Ishitani, Y; Yoshikawa, A;
PUBLISHED: 2011, SOURCE: 3rd International Symposium on Growth of III-Nitrides (ISGN) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, VOLUME: 8, ISSUE: 5
45
TITLE: Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet Full Text
AUTHORS: Ben Sedrine, N; Bouhafs, C; Harmand, JC; Chtourou, R; Darakchieva, V;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 20
AUTHORS: Ben Sedrine, N; Bouhafs, C; Harmand, JC; Chtourou, R; Darakchieva, V;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 20
