231
TITLE: Implantation of nanoporous GaN with Eu ions  Full Text
AUTHORS: Magalhães, S; Lorenz, K; Peres, M; Monteiro, T; Tripathy, S; Alves, E;
PUBLISHED: 2007, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 257, ISSUE: 1-2
INDEXED IN: CrossRef: 1
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232
TITLE: OPTICAL AND STRUCTURAL ANALYSIS OF Ge/Si QUANTUM DOTS GROWN ON A Si(001) SURFACE COVERED WITH A SiO 2 SUB-MONOLAYER   Full Text
AUTHORS: FONSECA, A; ALVES, E; LEITÃO, JP; SOBOLEV, NA; CARMO, MC; NIKIFOROV, A;
PUBLISHED: 2007, SOURCE: Int. J. Nanosci. - International Journal of Nanoscience, VOLUME: 06, ISSUE: 03n04
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233
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
INDEXED IN: CrossRef
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234
TITLE: Microstructural studies of PZT thick films on Cu foils  Full Text
AUTHORS: WU, A; VILARINHO, P; SRINIVASAN, S; KINGON, A; REANEY, I; WOODWARD, D; RAMOS, A; ALVES, E;
PUBLISHED: 2006, SOURCE: Acta Materialia, VOLUME: 54, ISSUE: 12
INDEXED IN: CrossRef: 17
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235
TITLE: Analysis of sol–gel silica–titania films doped with Ag and Er using artificial neural networks  Full Text
AUTHORS: N.R Nené; Vieira, A; A.C Marques; R.M Almeida; A.R Ramos; Alves, E; N.P Barradas;
PUBLISHED: 2006, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, ISSUE: 1-2
INDEXED IN: CrossRef
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236
TITLE: Damage behaviour of GaAs/AlAs multilayer structures  Full Text
AUTHORS: Magalhães, S; Fonseca, A; Franco, N; N.P Barradas; Sobolev, N; Hey, R; Grahn, H; Alves, E;
PUBLISHED: 2006, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, ISSUE: 1-2
INDEXED IN: CrossRef
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237
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing  Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
INDEXED IN: CrossRef
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238
TITLE: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation  Full Text
AUTHORS: Hernández, S; Cuscó, R; Artús, L; Nogales, E; R.W Martin; K.P O’Donnell; Halambalakis, G; Briot, O; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
INDEXED IN: CrossRef
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239
TITLE: Structural and optical properties of Er 3+ ion in sol–gel grown LiNbO 3   Full Text
AUTHORS: Graça, MPF; Valente, MA; Peres, M; Cruz, A; Soares, MJ; Neves, AJ; Monteiro, T; Alves, LC; Alves, E;
PUBLISHED: 2006, SOURCE: Journal of Physics: Condensed Matter - J. Phys.: Condens. Matter, VOLUME: 19, ISSUE: 1
INDEXED IN: CrossRef: 8
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240
TITLE: <title>Optical properties of Er<formula><sup><roman>3+</roman></sup></formula> + Yb<formula><sup><roman>3+</roman></sup></formula> doped gallium nitride layers</title>
AUTHORS: Vaclav Prajzler; Eduardo Alves; Christoph Buchal; Ivan Huttel; Jarmila Spirkova; Jiri Oswald; Jiri Zavadil; Vratislav Perina; Vitezslav Jerabek;
PUBLISHED: 2006, SOURCE: Advances in Thin-Film Coatings for Optical Applications III
INDEXED IN: CrossRef
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Page 24 of 27. Total results: 267.