Elvira Maria Correia Fortunato
AuthID: R-000-4M5
311
TITLE: Electrochemical Transistor Based on Tungsten Oxide with Optoelectronic Properties
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
312
TITLE: InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, ISSUE: 4
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, ISSUE: 4
313
TITLE: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: Applied Surface Science, VOLUME: 379
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: Applied Surface Science, VOLUME: 379
314
TITLE: Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications Full Text
AUTHORS: Rodrigues, J; Cerqueira, AFR; Sousa, MG; Santos, NF; Pimentel, A; Fortunato, E; da Cunha, AF; Monteiro, T; Costa, FM;
PUBLISHED: 2016, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 177
AUTHORS: Rodrigues, J; Cerqueira, AFR; Sousa, MG; Santos, NF; Pimentel, A; Fortunato, E; da Cunha, AF; Monteiro, T; Costa, FM;
PUBLISHED: 2016, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 177
315
TITLE: Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors Full Text
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 20
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 20
316
TITLE: The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering Full Text
AUTHORS: Zubizarreta, C; Berasategui, EG; Ciarsolo, I; Barriga, J; Gaspar, D; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: 10th International Conference on Surfaces, Coatings and Nano-Structured Materials (NANOSMAT) in APPLIED SURFACE SCIENCE, VOLUME: 380
AUTHORS: Zubizarreta, C; Berasategui, EG; Ciarsolo, I; Barriga, J; Gaspar, D; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: 10th International Conference on Surfaces, Coatings and Nano-Structured Materials (NANOSMAT) in APPLIED SURFACE SCIENCE, VOLUME: 380
317
TITLE: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
INDEXED IN: 
WOS
WOS318
TITLE: Design of optimized wave-optical spheroidal nanostructures for photonic-enhanced solar cells Full Text
AUTHORS: Manuel J Mendes; Andreia Araujo; Antonio Vicente; Hugo Aguas; Isabel Ferreira; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2016, SOURCE: NANO ENERGY, VOLUME: 26
AUTHORS: Manuel J Mendes; Andreia Araujo; Antonio Vicente; Hugo Aguas; Isabel Ferreira; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2016, SOURCE: NANO ENERGY, VOLUME: 26
319
TITLE: Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric Full Text
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 23
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 23
320
TITLE: Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance Full Text
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
