31
TITLE: Determination of the Be-9(He-3,p(i))B-11 (i=0,1,2,3) cross section at 135 degrees in the energy range 1-2.5 MeV  Full Text
AUTHORS: Barradas, NP; Catarino, N; Mateus, R; Magalhaes, S; Alves, E; Siketic, Z; Bogdanovic B Radovic;
PUBLISHED: 2015, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 346
INDEXED IN: Scopus WOS CrossRef
32
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
INDEXED IN: Scopus WOS
33
TITLE: The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering
AUTHORS: Rocio Felix; Marco Peres; Sergio Magalhaes; Maria Rosario Correia; Armando Lourenco; Teresa Monteiro; Rafael Garcia; Francisco M Morales;
PUBLISHED: 2015, SOURCE: JOURNAL OF NANOMATERIALS
INDEXED IN: WOS
34
TITLE: Disorder induced violet/blue luminescence in rf-deposited ZnO films  Full Text
AUTHORS: Peres, M; Magalhaes, S; Soares, MR; Soares, MJ ; Rino, L; Alves, E ; Lorenz, K; Correia, MR ; Lourenco, AC; Monteiro, T ;
PUBLISHED: 2013, SOURCE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 9
35
TITLE: Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation
AUTHORS: Bruno Nunes; Sergio Magalhaes; Nuno Franco; Eduardo Alves ; Ana Paula Serro ; Rogerio Colaco ;
PUBLISHED: 2013, SOURCE: 6th International Materials Symposium (MATERIALS 2011)/15th Meeting of SPM in ADVANCED MATERIALS FORUM VI, PTS 1 AND 2, VOLUME: 730-732
INDEXED IN: Scopus WOS CrossRef
36
TITLE: Microstructure and nanomechanical properties of Fe+ implanted silicon  Full Text
AUTHORS: Nunes, B; Magalhaes, S; Franco, N; Alves, E ; Colaco, R;
PUBLISHED: 2013, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 284
INDEXED IN: Scopus WOS CrossRef
37
TITLE: Lattice site location and luminescence studies of AlxGa1-xN alloys doped with thulium ions  Full Text
AUTHORS: Fialho, M; Lorenz, K ; Magalhaes, S; Rodrigues, J; Santos, NF; Monteiro, T; Alves, E ;
PUBLISHED: 2013, SOURCE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
INDEXED IN: Scopus WOS CrossRef: 4
38
TITLE: AlN content influence on the properties of AlxGa1-xN doped with Pr ions  Full Text
AUTHORS: Fialho, M; Magalhaes, S; Alves, LC ; Marques, C; Maalej, R; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS CrossRef: 3
39
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions  Full Text
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
INDEXED IN: Scopus WOS CrossRef: 3
Page 4 of 6. Total results: 55.