12
TITLE: Optical doping of nitrides by ion implantation  Full Text
AUTHORS: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
13
TITLE: Photoluminescence and lattice location of Eu and Pr implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 78
14
TITLE: Green and red emission in Ca implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Alves, E ; Liu, C;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 3
15
TITLE: Photoluminescence studies in ZnO samples  Full Text
AUTHORS: Boemare, C; Monteiro, T ; Soares, MJ ; Guilherme, JG; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 65
16
TITLE: Optical studies in ZnSe/GaAs epilayers: Fabry-Perot modes in the upper branch of the polariton  Full Text
AUTHORS: Boemare, C; Gil, B; Assuncao, M; Nazare, MH;
PUBLISHED: 1996, SOURCE: 7th International Conference on II-VI Compounds and Devices in JOURNAL OF CRYSTAL GROWTH, VOLUME: 159, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 3
17
TITLE: OBSERVATION OF FABRY-PEROT MODES IN THE UPPER BRANCH OF THE POLARITON IN ZNSE-GAAS EPILAYERS
AUTHORS: BOEMARE, C; GIL, B; ASSUNCAO, M; SOLLNER, J; TAUDT, W; HEUKEN, M; NAZARE, MH;
PUBLISHED: 1995, SOURCE: PHYSICAL REVIEW B, VOLUME: 51, ISSUE: 12
INDEXED IN: Scopus WOS
18
TITLE: Photoreflectance, reflectivity and photoluminescence of MOVPE grown ZnSe/GaAs epilayers and ZnSeS/ZnSe superlattices
AUTHORS: Boemare, C; Nazare, MH; Taudt, W; Sollner, J; Heuken, M;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-, ISSUE: pt 1
INDEXED IN: Scopus WOS
19
TITLE: High resolution photoluminescence studies of acceptor bound excitons in CDS/CDTE heterostructure under magnetic field.  Full Text
AUTHORS: M.H Nazare; Claude Boemare; Assunção, M;
PUBLISHED: 1994, SOURCE: Solid State Communications, VOLUME: 90, ISSUE: 10
INDEXED IN: CrossRef
20
TITLE: OPTICAL-TRANSITIONS ON CDS CDTE CVD HETEROSTRUCTURES
AUTHORS: BOEMARE, C; NAZARE, MH;
PUBLISHED: 1992, SOURCE: SYMP ON WIDE BAND GAP SEMICONDUCTORS, AT THE 1991 FALL MEETING OF THE MATERIALS RESEARCH SOC in WIDE BAND GAP SEMICONDUCTORS, VOLUME: 242
INDEXED IN: WOS
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