12
TITLE: Local O-delta probing in the high-T-c superconductor HgBa2CuO4+delta
AUTHORS: Correia, JG; Araujo, JP ; Loureiro, SM; Toulemonde, P; Le Floch, S; Bordet, P; Capponi, JJ; Gatt, R; Troger, W; Ctortecka, B; Butz, T; Haas, H; Marques, JG ; Soares, JC;
PUBLISHED: 2000, SOURCE: PHYSICAL REVIEW B, VOLUME: 61, ISSUE: 17
INDEXED IN: WOS CrossRef: 10
13
TITLE: High-T-c superconductors studies with radioactive ion beams at isolde
AUTHORS: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; Soares, JC; Sousa, JB; Toulemonde, P; Troger, W; Vantomme, A; Wahl, U; Weiss, F; ...More
PUBLISHED: 1999, SOURCE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
INDEXED IN: WOS
14
TITLE: The influence of oxygen on the lattice sites of rare earths in silicon
AUTHORS: Wahl, U; Vantomme, A; Langouche, G; Correia, JG;
PUBLISHED: 1999, SOURCE: Symposium B on Light Emission from Silicon - Progress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, VOLUME: 77
INDEXED IN: WOS
15
TITLE: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTHORS: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
INDEXED IN: WOS
Page 2 of 2. Total results: 15.