João Pedro Estrela Rodrigues Conde
AuthID: R-000-7DS
261
TITLE: HIGH-GROWTH RATE A-SIH DEPOSITED BY HOT-WIRE CVD
AUTHORS: BROGUEIRA, P; CHU, V; CONDE, JP;
PUBLISHED: 1994, SOURCE: Symposium on Amorphous Silicon Technology, at the 1994 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY-1994, VOLUME: 336
AUTHORS: BROGUEIRA, P; CHU, V; CONDE, JP;
PUBLISHED: 1994, SOURCE: Symposium on Amorphous Silicon Technology, at the 1994 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY-1994, VOLUME: 336
INDEXED IN: 
Scopus 
WOS
Scopus WOS IN MY: 
ORCID
ORCID264
TITLE: Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
265
TITLE: Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Cuomo, JJ;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Cuomo, JJ;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
266
TITLE: The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
INDEXED IN: 
CrossRef
CrossRef267
TITLE: A-SI-H,F-REVERSIBLE-A-SI,GE-H,F GRADED-BANDGAP STRUCTURES
AUTHORS: CONDE, JP; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: INTERNATIONAL TOPICAL CONF ON HYDROGENATED AMORPHOUS SILICON DEVICES AND TECHNOLOGY in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 36, ISSUE: 12
AUTHORS: CONDE, JP; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: INTERNATIONAL TOPICAL CONF ON HYDROGENATED AMORPHOUS SILICON DEVICES AND TECHNOLOGY in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 36, ISSUE: 12
INDEXED IN: Scopus WOS
Scopus WOS IN MY: ORCID
ORCID268
TITLE: Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap Full Text
AUTHORS: Chu, V; Conde, JP; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
AUTHORS: Chu, V; Conde, JP; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
269
TITLE: SCHOTTKY-BARRIER FORMATION BETWEEN TRANSITION-METALS AND AMORPHOUS-SILICON GERMANIUM ALLOYS
AUTHORS: CHU, V; HORNG, SF; CONDE, JP; KAHN, A; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
AUTHORS: CHU, V; HORNG, SF; CONDE, JP; KAHN, A; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID270
TITLE: AMORPHOUS SILICON-GERMANIUM ALLOY MULTILAYER STRUCTURES
AUTHORS: CONDE, JP; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
AUTHORS: CONDE, JP; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1988, SOURCE: JOURNAL OF ELECTRONIC MATERIALS, VOLUME: 17, ISSUE: 4
INDEXED IN: WOS
WOS IN MY: ORCID
ORCID