Katharina Lorenz
AuthID: R-000-90E
181
TITLE: Annealing behaviour of GaN after implantation with hafnium and indium Full Text
AUTHORS: Lorenz, K; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 228, ISSUE: 1
AUTHORS: Lorenz, K; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 228, ISSUE: 1
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TITLE: OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION Full Text
AUTHORS: ALVES, E; LORENZ, K; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29
AUTHORS: ALVES, E; LORENZ, K; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29
