81
TITLE: Concurrent segregation and erosion effects in medium-energy iron beam patterning of silicon surfaces
AUTHORS: Redondo Cubero, A; Lorenz, K; Palomares, FJ; Muñoz, A; Castro, M; Muñoz García, J; Cuerno, R; Vázquez, L;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 30, ISSUE: 27
INDEXED IN: Scopus WOS CrossRef: 7
IN MY: ORCID
82
TITLE: Implantation damage formation in a-, c- and m-plane GaN  Full Text
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: Scopus WOS CrossRef: 72
IN MY: ORCID
83
TITLE: Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
IN MY: ORCID
84
TITLE: Effect of buried extended defects on the radiation tolerance of ZnO
AUTHORS: Azarov, A; Wendler, E; Lorenz, K; Monakhov, E; Svensson, BG;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
85
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates  Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: WOS
IN MY: ORCID
86
TITLE: Effects of thermal annealing on the structural and electronic properties of rare earth-implanted MoO3 nanoplates  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Lorenz, K; Piqueras, J; Pis, I; Magnano, E; Munuera, C; Alves, E; Garcia Hernandez, M;
PUBLISHED: 2017, SOURCE: CRYSTENGCOMM, VOLUME: 19, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
87
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 &lt; x &lt; 0.28) thin films grown on GaN templates  Full Text
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
INDEXED IN: Scopus CrossRef: 10
IN MY: ORCID
88
TITLE: Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
AUTHORS: Schöche, S; Hofmann, T; Nilsson, D; Kakanakova Georgieva, A; Janzén, E; Kühne, P; Lorenz, K; Schubert, M; Darakchieva, V;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 15
IN MY: ORCID
89
TITLE: Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
INDEXED IN: Scopus WOS CrossRef: 16
IN MY: ORCID
90
TITLE: Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the D-5(1) level
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Cameron, D; Lorenz, K; Kapper, MJ; Bockowski, M; Yamaga, M; Prakash, R;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 111, ISSUE: 24
INDEXED IN: WOS CrossRef: 12
IN MY: ORCID
Page 9 of 19. Total results: 182.