Katharina Lorenz
AuthID: R-000-90E
41
TITLE: Crystal damage analysis of implanted AlxGa1-xN (0 <= x <= 1) by ion beam techniques Full Text
AUTHORS: Nd. N Faye; Dobeli, M; Wendler, E; Brunner, F; Weyers, M; Magalhaes, S; Alves, E; Lorenz, K;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
AUTHORS: Nd. N Faye; Dobeli, M; Wendler, E; Brunner, F; Weyers, M; Magalhaes, S; Alves, E; Lorenz, K;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: 
WOS
WOS42
TITLE: Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications Full Text
AUTHORS: Cardoso, J; Ben Sedrine, N; Alves, A; Martins, MA; Belloeil, M; Daudin, B; Nd. N Faye; Alves, E; Lorenz, K; Neves, AJ; Correia, MR; Monteiro, T;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 20
AUTHORS: Cardoso, J; Ben Sedrine, N; Alves, A; Martins, MA; Belloeil, M; Daudin, B; Nd. N Faye; Alves, E; Lorenz, K; Neves, AJ; Correia, MR; Monteiro, T;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 20
INDEXED IN: 
Scopus WOS
Scopus WOS43
TITLE: Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites
AUTHORS: Ben Sedrine, N; Rodrigues, J; Nd N Faye; Neves, AJ; Alves, E; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K; Correia, MR; Monteiro, T;
PUBLISHED: 2018, SOURCE: ACS APPLIED NANO MATERIALS, VOLUME: 1, ISSUE: 8
AUTHORS: Ben Sedrine, N; Rodrigues, J; Nd N Faye; Neves, AJ; Alves, E; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K; Correia, MR; Monteiro, T;
PUBLISHED: 2018, SOURCE: ACS APPLIED NANO MATERIALS, VOLUME: 1, ISSUE: 8
INDEXED IN: WOS
WOS44
TITLE: Implantation damage formation in a-, c- and m-plane GaN Full Text
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: Scopus WOS
Scopus WOS45
TITLE: Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor Full Text
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7
INDEXED IN: Scopus WOS
Scopus WOS46
TITLE: Effect of buried extended defects on the radiation tolerance of ZnO Full Text
AUTHORS: Alexander Azarov; Elke Wendler; Katharina Lorenz; Edouard Monakhov; Bengt G Svensson;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
AUTHORS: Alexander Azarov; Elke Wendler; Katharina Lorenz; Edouard Monakhov; Bengt G Svensson;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
INDEXED IN: Scopus WOS
Scopus WOS47
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: WOS
WOS48
TITLE: Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
INDEXED IN: WOS
WOS49
TITLE: Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications Full Text
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
50
TITLE: Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the D-5(0) to F-7(1) transition Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Yamaga, M; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 2
AUTHORS: O'Donnell, KP; Edwards, PR; Yamaga, M; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 2
