91
TITLE: Electrical and photoelectronic properties of hexagonal GaN  Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, L ; Pereira, E; Schon, O; Heuken, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef Handle
92
TITLE: Interface properties and capacitance-voltage behaviour of diamond devices prepared by microwave-assisted CVD  Full Text
AUTHORS: Rodrigues, AM; Gomes, HL ; Rees, JA; Pereira, L ; Pereira, E;
PUBLISHED: 1999, SOURCE: IV International Workshop on Surface and Bulk Defects in CVD Diamond and Related Films in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 174, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
93
TITLE: Photoconductivity and electrical properties of diamond films grown by MPCVD  Full Text
AUTHORS: Pereira, L ; Pereira, E; Gomes, H ;
PUBLISHED: 1998, SOURCE: DIAMOND AND RELATED MATERIALS, VOLUME: 7, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef: 5
94
TITLE: Schottky barrier diodes from diamond grown by microwave plasma assisted chemical vapor deposition (MPCVD)
AUTHORS: Pereira, L ; Gomes, HL ; Rodrigues, A ; Pereira, E;
PUBLISHED: 1998, SOURCE: 2nd International Symposium on Diamond Electronics Devices (ISDED-2) in DIAMOND FILMS AND TECHNOLOGY, VOLUME: 8, ISSUE: 4
INDEXED IN: Scopus WOS
95
TITLE: Study of defects in diamond films by electrical measurements
AUTHORS: Pereira, L ; Pereira, E; Gomes, H ;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
96
TITLE: Correlation between crystal structure, quality and luminescence in torch flame grown diamond films  Full Text
AUTHORS: Pereira, L ; Pereira, E; Cremades, A; Piqueras, J;
PUBLISHED: 1996, SOURCE: DIAMOND AND RELATED MATERIALS, VOLUME: 5, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 8
97
TITLE: CHARACTERIZATION OF FLAME GROWN DIAMOND FILMS BY LUMINESCENCE AND EPR
AUTHORS: PEREIRA, L ; PEREIRA, E; TAVARES, C; NETO, M ; CREMADES, A; PIQUERAS, J; JIMENEZ, J; MARTIN, P;
PUBLISHED: 1995, SOURCE: Symposium F: Microcrystalline and Nanocrystalline Semiconductors, at the 1994 Fall Meeting of the Materials-Research-Society in MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS, VOLUME: 358
INDEXED IN: Scopus WOS
98
TITLE: Excited levels of the 2.56 eV emission in synthetic diamond
AUTHORS: Pereira, E; Pereira, L ; Hofmann, DM; Stadler, W; Meyer, BK;
PUBLISHED: 1995, SOURCE: 7th Europhysical Conference on Defects in Insulating Materials (Eurodim 94) in RADIATION EFFECTS AND DEFECTS IN SOLIDS, VOLUME: 135, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 2
99
TITLE: Ni related centers in synthetic diamond
AUTHORS: Hofmann, DM; Christmann, P; Volm, D; Pressel, K; Pereira, L ; Santos, L; Pereira, E;
PUBLISHED: 1995, SOURCE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-, ISSUE: pt 1
INDEXED IN: Scopus WOS
100
TITLE: ACCEPTOR LEVEL OF SUBSTITUTIONAL NI IN DIAMOND
AUTHORS: HOFMANN, DM; LUDWIG, M; CHRISTMANN, P; VOLM, D; MEYER, BK; PEREIRA, L ; SANTOS, L; PEREIRA, E;
PUBLISHED: 1994, SOURCE: PHYSICAL REVIEW B, VOLUME: 50, ISSUE: 23
INDEXED IN: Scopus WOS
Page 10 of 11. Total results: 107.