Sergey Levichev


AuthID: R-000-GDT

Confirmed Publications: 26



21
TITLE: Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering  Full Text
AUTHORS: Levichev, S ; Chahboun, A ; Basa, P; Rolo, AG ; Barradas, NP ; Alves, E ; Zs J Horvath; Conde, O ; Gomes, MJM ;
PUBLISHED: 2008, SOURCE: Symposium on Materials and Emerging Technologies for Non-Volatile-Memory Devices held at the 2008 EMRS Spring Meeting in MICROELECTRONIC ENGINEERING, VOLUME: 85, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef
22
TITLE: Confinement effect in CdTe nanocrystals embedded in silica thin films  Full Text
AUTHORS: Levichev, S ; Rolo, AG ; Chahboun, A ; Conde, O ; Kovalev, AI; Wainstein, DL; Gorries, MJM;
PUBLISHED: 2008, SOURCE: 8th International Conference on Trends in Nanotechnology (TNT2007) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
23
TITLE: Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO(2) matrix  Full Text
AUTHORS: Kafadaryan, EA; Levichev, S ; Pinto, SRC; Aghamalyan, NR; Hovsepyan, RK; Badalyan, GR; Chahboun, A ; Rolo, AG ; Gomes, MJM ;
PUBLISHED: 2008, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 23, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
24
TITLE: Memory effect on CdSe nanocrystals embedded in SiO2 matrix  Full Text
AUTHORS: Levichev, S ; Basa, P; Zs. J Horvath; Chahboun, A ; Rolo, AG ; Barradas, NP ; Alves, E ; Gomes, MJM ;
PUBLISHED: 2008, SOURCE: SOLID STATE COMMUNICATIONS, VOLUME: 148, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
25
TITLE: Structural and optical properties of Ge nanocrystals embedded in Al2O3
AUTHORS: Caldelas, P; Rolo, AG ; Chahboun, A ; Foss, S; Levichev, S ; Finstad, TG; Gomes, MJM ; Conde, O ;
PUBLISHED: 2008, SOURCE: International Workshop on Nanostructured Materials (ANAOMAT 2006) in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 8, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
26
TITLE: Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer  Full Text
AUTHORS: Karpovich, IA; Zvonkov, BN; Levichev, SB ; Baidus, NV; Tikhov, SV; Filatov, DO; Gorshkov, AP; Ermakov, SY;
PUBLISHED: 2004, SOURCE: SEMICONDUCTORS, VOLUME: 38, ISSUE: 4
INDEXED IN: WOS CrossRef
Page 3 of 3. Total results: 26.

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