Teresa Maria Fernandes Rodrigues Cabral Monteiro


AuthID: R-000-H53

Confirmed Publications: 274



251
TITLE: A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
AUTHORS: Vacas, J; Lahreche, H; Monteiro, T ; Gaspar, C; Pereira, E; Brylinski, C; di Forte Poisson, MA;
PUBLISHED: 2000, SOURCE: International Conference on Silicon Carbide and Related Materials in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, VOLUME: 338-3
INDEXED IN: Scopus WOS
252
TITLE: Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire  Full Text
AUTHORS: Alves, E ; da Silva, MF; Soares, JC ; Monteiro, T ; Soares, J; Santos, L;
PUBLISHED: 2000, SOURCE: 10th International Conference on Radioation Effects in Insulators (REI-10) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 166
INDEXED IN: Scopus WOS CrossRef Handle
253
TITLE: Optical and electrical characterisation of iron-doped ZnO
AUTHORS: Gaspar, C; Pereira, L ; Costa, FM; Monteiro, T ; Han, J; Senos, AMR; Mantas, P;
PUBLISHED: 2000, SOURCE: 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, VOLUME: 2000-January
INDEXED IN: Scopus CrossRef
IN MY: ORCID | CIÊNCIAVITAE
254
TITLE: Steady-state and time-resolved luminescence in InGaN layers  Full Text
AUTHORS: Seitz, R; Gaspar, C; Correia, M ; Monteiro, T ; Pereira, E; Heuken, M; Schoen, O;
PUBLISHED: 2000, SOURCE: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter in JOURNAL OF LUMINESCENCE, VOLUME: 87-9
INDEXED IN: Scopus WOS CrossRef Handle
255
TITLE: Electrical and photoelectronic properties of hexagonal GaN  Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, L; Pereira, E; Schon, O; Heuken, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef Handle
256
TITLE: Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Poisson, MA; Beaumont, B;
PUBLISHED: 1999, SOURCE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
257
TITLE: Strain distribution in GaN hexagons measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 216, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1 Handle
258
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: WOS CrossRef Handle
259
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) in Physica Status Solidi (A) Applied Research, VOLUME: 176, ISSUE: 1
INDEXED IN: Scopus CrossRef
260
TITLE: Time resolved photoluminescence of cubic Mg doped GaN
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Schoettker, B; Frey, T; As, DJ; Schikora, D; Lischka, K;
PUBLISHED: 1999, SOURCE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
Page 26 of 28. Total results: 274.

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