Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

AuthID
P-001-2TP
4
Author(s)
Seitz, R
·
Di Forte Poisson, M
Document Type
Article
Year published
1999
Published
in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, ISSN: 0031-8965
Volume: 176, Issue: 1, Pages: 661-664 (4)
Conference
3Rd International Conference on Nitride Semiconductors (Icns 99), Date: JUL 05-09, 1999, Location: MONTPELLIER, FRANCE, Sponsors: ICNS
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ISSN: 0031-8965
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