Teresa Maria Fernandes Rodrigues Cabral Monteiro


AuthID: R-000-H53

Confirmed Publications: 296



271
TITLE: Strain distribution in GaN hexagons measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 216, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1 Handle
IN MY: ORCID | CIÊNCIAVITAE
272
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: WOS CrossRef Handle
273
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) in Physica Status Solidi (A) Applied Research, VOLUME: 176, ISSUE: 1
INDEXED IN: Scopus CrossRef
IN MY: ORCID | CIÊNCIAVITAE
274
TITLE: Time resolved photoluminescence of cubic Mg doped GaN
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Schoettker, B; Frey, T; As, DJ; Schikora, D; Lischka, K;
PUBLISHED: 1999, SOURCE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
275
TITLE: Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN  Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1998, SOURCE: 2nd International Conference on Nitride Semiconductors (ICNS 97) in JOURNAL OF CRYSTAL GROWTH, VOLUME: 189
INDEXED IN: Scopus WOS CrossRef: 7
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
276
TITLE: Blue emission in Mg doped GaN studied by time resolved spectroscopy
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
277
TITLE: Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire  Full Text
AUTHORS: Monteiro, T ; Pereira, E; Correia, MR ; Xavier, C; Hofmann, DM; Meyer, BK; Fischer, S; Cremades, A; Piqueras, J;
PUBLISHED: 1997, SOURCE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
278
TITLE: Temperature behaviour of the yellow emission in GaN
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1997, SOURCE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 2, ISSUE: 33-41
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
279
TITLE: 2.2 eV luminescence in GaN
AUTHORS: Hofmann, DM; Kovalev, D; Steude, G; Volm, D; Meyer, BK; Xavier, C; Monteiro, T ; Pereira, E; Mokov, EN; Amano, H; Akasaki, I;
PUBLISHED: 1996, SOURCE: 1st International Symposium on Gallium Nitride and Related Materials in GALLIUM NITRIDE AND RELATED MATERIALS, VOLUME: 395
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
280
TITLE: Cathodoluminescence study of GaN epitaxial layers  Full Text
AUTHORS: Cremades, A; Piqueras, J; Xavier, C; Monteiro, T ; Pereira, E; Meyer, BK; Hofmann, DM; Fischer, S;
PUBLISHED: 1996, SOURCE: 4th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 42, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
Page 28 of 30. Total results: 296.

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