71
TITLE: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTHORS: Lorenz, K ; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E ; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T ;
PUBLISHED: 2016, SOURCE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
INDEXED IN: Scopus WOS CrossRef: 1
72
TITLE: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K ; Alves, E ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 2
73
TITLE: Structural, optical, and electrical properties of SmNbO4  Full Text
AUTHORS: Nico, C; Soares, MRN; Costa, FM; Monteiro, T ; Graca, MPF;
PUBLISHED: 2016, SOURCE: 6th International Conference on Advanced Nanomaterials (ANM) in JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef: 3
74
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices  Full Text
AUTHORS: Faye, DN; Fialho, M; Magalhaes, S; Alves, E ; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T ; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K ;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
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76
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents  Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E ; Araujo, JP ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 7
77
TITLE: Core-shell GaN-ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (111) as a basis for improved InGaN-based photovoltaics and LEDs  Full Text
AUTHORS: Rogers, DJ; Sandana, VE; Gautier, S; Moudakir, T; Abid, M; Ougazzaden, A; Hosseini H Teherani; Bove, P; Molinari, M; Troyon, M; Peres, M; Manuel J Soares; Neves, AJ; Monteiro, T ; McGrouther, D; Chapman, JN; J Drouhin; McClintock, R; Razeghi, M;
PUBLISHED: 2015, SOURCE: PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, VOLUME: 15
INDEXED IN: Scopus WOS CrossRef: 3
78
TITLE: Corrigendum to: “Eu3+ luminescence in aluminophosphate glasses” [J. Lumin. 145 (2014) 582–587]  Full Text
AUTHORS: Nico, C; Fernandes, R; M.P.F Graça; Elisa, M; B.A Sava; R.C.C Monteiro; Rino, L; Monteiro, T ;
PUBLISHED: 2015, SOURCE: Journal of Luminescence, VOLUME: 161
INDEXED IN: CrossRef
79
TITLE: Defect luminescence in oxide nanocrystals grown by laser assisted techniques
AUTHORS: Rodrigues, J; Soares, MRN; Santos, NF; Holz, T; Ben Sedrine, N; Nico, C; Fernandes, AJS; Neves, AJ; Costa, FM; Monteiro, T ;
PUBLISHED: 2015, SOURCE: Conference on Nanotechnology VII in NANOTECHNOLOGY VII, VOLUME: 9519
INDEXED IN: Scopus WOS CrossRef: 1
80
TITLE: Effect of N-2 and H-2 plasma treatments on band edge emission of ZnO microrods  Full Text
AUTHORS: Joana Rodrigues; Tiago Holz; Rabie Fath Allah; David Gonzalez; Teresa Ben; Maria R Correia; Teresa Monteiro ; Florinda M Costa;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
INDEXED IN: Scopus WOS CrossRef: 12
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