Study of Damage Formation and Annealing of Implanted Iii-Nitride Semiconductors for Optoelectronic Devices

AuthID
 P-00K-MS6
12
Author(s)
Fialho, M
·
Bockowski, M
·
Hoffmann, V
·
Weyers, M
·
Document Type
Article
Year published
2016
Published
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 379, Pages: 251-254 (4)
Conference
18Th International Conference on Radiation Effects in Insulators (Rei), Date: OCT 26-31, 2015, Location: Jaipur, INDIA
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Publication Identifiers
Wos: WOS:000379093800049
Source Identifiers
ISSN: 0168-583X
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