Teresa Maria Fernandes Rodrigues Cabral Monteiro


AuthID: R-000-H53

Confirmed Publications: 153



131
TITLE: Optical doping of nitrides by ion implantation  Full Text
AUTHORS: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
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132
TITLE: Photoluminescence and lattice location of Eu and Pr implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 78
IN MY: ORCID | ResearcherID
133
TITLE: Photoluminescence studies in ZnO samples  Full Text
AUTHORS: Boemare, C; Monteiro, T ; Soares, MJ ; Guilherme, JG; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 65
IN MY: ORCID | ResearcherID
134
TITLE: A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
AUTHORS: Vacas, J; Lahreche, H; Monteiro, T ; Gaspar, C; Pereira, E; Brylinski, C; di Forte Poisson, MA;
PUBLISHED: 2000, SOURCE: International Conference on Silicon Carbide and Related Materials in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, VOLUME: 338-3
INDEXED IN: Scopus WOS
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135
TITLE: Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire  Full Text
AUTHORS: Alves, E ; da Silva, MF; Soares, JC ; Monteiro, T ; Soares, J; Santos, L;
PUBLISHED: 2000, SOURCE: 10th International Conference on Radioation Effects in Insulators (REI-10) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 166
INDEXED IN: Scopus WOS CrossRef: 13
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136
TITLE: Steady-state and time-resolved luminescence in InGaN layers  Full Text
AUTHORS: Seitz, R; Gaspar, C; Correia, M ; Monteiro, T ; Pereira, E; Heuken, M; Schoen, O;
PUBLISHED: 2000, SOURCE: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter in JOURNAL OF LUMINESCENCE, VOLUME: 87-9
INDEXED IN: Scopus WOS CrossRef: 1
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137
TITLE: Electrical and photoelectronic properties of hexagonal GaN  Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, L; Pereira, E; Schon, O; Heuken, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID | ResearcherID
138
TITLE: Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Poisson, MA; Beaumont, B;
PUBLISHED: 1999, SOURCE: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, VOLUME: 572
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
139
TITLE: Strain distribution in GaN hexagons measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 216, ISSUE: 1
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
140
TITLE: Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy  Full Text
AUTHORS: Seitz, R; Monteiro, T ; Pereira, E; Di Forte Poisson, M;
PUBLISHED: 1999, SOURCE: 3rd International Conference on Nitride Semiconductors (ICNS 99) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 176, ISSUE: 1
INDEXED IN: WOS CrossRef
IN MY: ResearcherID
Page 14 of 16. Total results: 153.

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