Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 908



491
492
TITLE: The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000 degrees C  Full Text
AUTHORS: Alves, E ; Marques, C; Safran, G; Carl J McHargue; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2009, SOURCE: 20th International Conference on Application of Accelerators in Research and Industry in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, VOLUME: 1099
INDEXED IN: Scopus WOS CrossRef
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493
TITLE: W-Diamond/Cu-Diamond Nanostructured Composites for Fusion Devices
AUTHORS: Nunes, D ; Livramento, V; Correia, JB; Mateus, R ; Carvalho, PA ; Shohoji, N; Fernandes, H ; Silva, C ; Alves, E ; Hanada, K; Osawa, E;
PUBLISHED: 2009, SOURCE: Symposium on Materials for Future Fusion and Fission Technologies held at the 2008 MRS Fall Meeting in MATERIALS FOR FUTURE FUSION AND FISSION TECHNOLOGIES, VOLUME: 1125
INDEXED IN: Scopus WOS
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494
TITLE: ZnO Thin Films Implanted with Al, Sb and P: Optical, Structural and Electrical Characterization
AUTHORS: Viseu, T ; de Campos, JA; Rolo, AG ; de Lacerda Aroso, T ; Cerqueira, MF ; Alves, E ;
PUBLISHED: 2009, SOURCE: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 9, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef Handle
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495
TITLE: ZrOxNy decorative thin films prepared by the reactive gas pulsing process  Full Text
AUTHORS: Pedro Carvalho; Luis Cunha ; Eduardo Alves ; Nicolas Martin; Eric Le Bourhis; Filipe Vaz ;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef
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496
TITLE: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation  Full Text
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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497
TITLE: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C  Full Text
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
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498
TITLE: Anisotropy effects on the formation of new phases in alpha-Al2O3 by high fluence Zn implantation  Full Text
AUTHORS: Marques, C; Franco, N; da Silva, RC; McHargue, C; Alves, E ;
PUBLISHED: 2008, SOURCE: 14th International Conference on Radiation Effects in Insulators (REI-14) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 266, ISSUE: 12-13
INDEXED IN: Scopus WOS CrossRef
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499
TITLE: Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
AUTHORS: Levichev, S ; Chahboun, A ; Basa, P; Rolo, AG ; Barradas, NP ; Alves, E ; Horvath, ZJ; Conde, O ; Gomes, MJM ;
PUBLISHED: 2008, SOURCE: Symposium on Materials and Emerging Technologies for Non-Volatile-Memory Devices held at the 2008 EMRS Spring Meeting in MICROELECTRONIC ENGINEERING, VOLUME: 85, ISSUE: 12
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Page 50 of 91. Total results: 908.

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