ProfileOfResearchers

512

TITLE: Erratum: Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures (Physical Review B - Condensed Matter and Materials Physics (2007) 76, (035344))
AUTHORS: Itskos, G; Heliotis, G; Lagoudakis, PG; Lupton, J; Barradas, NP ; Alves, E ; Pereira, S; Watson, IM; Dawson, MD; Feldmann, J; Murray, R; Bradley, DDC;
PUBLISHED: 2008, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 77, ISSUE: 7

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513

TITLE: Evaluation of exposure parameters in plain radiography: A comparative study with European guidelines
AUTHORS: Lanca, L; Silva, A ; Alves, E ; Serranheira, F ; Correia, M;
PUBLISHED: 2008, SOURCE: Workshop on Safety and Efficacy for New Techniques and Imaging using New Equipment Supporting European Legislation in RADIATION PROTECTION DOSIMETRY, VOLUME: 129, ISSUE: 1-3

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514

TITLE: Further insight into the temperature quenching of photoluminescence from InAs/GaAs self-assembled quantum dots Full Text
AUTHORS: Chahboun, A ; Vasilevskiy, MI ; Baidus, NV; Cavaco, A; Sobolev, NA; Carmo, MC; Alves, E ; Zvonkov, BN;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 8

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515

TITLE: Influence of air oxidation on the properties of decorative NbOxNy coatings prepared by reactive gas pulsing Full Text
AUTHORS: J.M Chappé; Carvalho, P; Lanceros-Mendez, S ; M.I Vasilevskiy; Vaz, F ; A.V Machado; Fenker, M; Kappl, H; N.M.G Parreira; Cavaleiro, A ; Alves, E ;
PUBLISHED: 2008, SOURCE: Surface and Coatings Technology, VOLUME: 202, ISSUE: 11

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516

TITLE: Influence of air oxidation on the properties of decorative NbOxNy coatings prepared by reactive gas pulsing Full Text
AUTHORS: Chappe, JM; Carvalho, P; Lanceros Mendez, S ; Vasilevskiy, MI ; Vaz, F ; Machado, AV ; Fenker, M; Kappl, H; Parreira, NMG; Cavaleiro, A ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in SURFACE & COATINGS TECHNOLOGY, VOLUME: 202, ISSUE: 11

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517

TITLE: Influence of the chemical and electronic structure on the electrical behavior of zirconium oxynitride films Full Text
AUTHORS: Carvalho, P; Chappe, JM; Cunha, L ; Lanceros Mendez, S ; Alpuim, P ; Vaz, F ; Alves, E ; Rousselot, C; Espinos, JP; Gonzalez Elipe, AR;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 10

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518

TITLE: Ion beam studies of InAs/GaAs self assembled quantum dots Full Text
AUTHORS: Alves, E ; Magalhaes, S; Barradas, NP ; Baidus, NV; Vasilevskiy, MI ; Zvonkov, BN;
PUBLISHED: 2008, SOURCE: 18th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 266, ISSUE: 8

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519

TITLE: Luminescence and vibrational properties of erbium-implanted nanoporous GaN Full Text
AUTHORS: Soh, CB; Chua, SJ; Sim, SH; Tripathy, S; Alves, E ;
PUBLISHED: 2008, SOURCE: 7th International Conference on Nitride Semiconductors (ICNS-7) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, VOLUME: 5, ISSUE: 6

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520

TITLE: Luminescence spectroscopy of Eu-implanted zincblende GaN Full Text
AUTHORS: Roqan, IS; O'Donnell, KP; Trager Cowan, C; Hourahine, B; Martin, RW; Lorenz, K ; Alves, E ; As, DJ; Panfilova, M; Watson, IM;
PUBLISHED: 2008, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 245, ISSUE: 1

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