731
TITLE: Annealing behavior and lattice site location of Er implanted InGaN  Full Text
AUTHORS: Alves, E ; Wahl, U ; Correia, MR ; Pereira, S ; De Vries, B; Vantomme, A;
PUBLISHED: 2003, SOURCE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206
INDEXED IN: Scopus WOS CrossRef
732
TITLE: Dielectric function of nanocrystalline silicon with few nanometers (< 3 nm) grain size  Full Text
AUTHORS: Losurdo, M; Giangregorio, MM; Capezzuto, P; Bruno, G; Cerqueira, MF ; Alves, E ; Stepikhova, M;
PUBLISHED: 2003, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 82, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef
733
TITLE: Effects of the morphology and structure on the elastic behavior of (Ti,Si,Al)N nanocomposites  Full Text
AUTHORS: Carvalho, S ; Ribeiro, E; Rebouta, L ; Vaz, F ; Alves, E ; Schneider, D; Cavaleiro, A ;
PUBLISHED: 2003, SOURCE: 8th International Conference on Plasma Surface Engineering in SURFACE & COATINGS TECHNOLOGY, VOLUME: 174
INDEXED IN: Scopus WOS CrossRef: 18
734
TITLE: Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth implanted GaN
AUTHORS: Dalmasso, S; Martin, RW; Edwards, PR; Katchkanov, V; O'Donnell, KP; Lorenz, K ; Alves, E ; Wahl, U ; Pipeleers, B; Matias, V; Vantomme, A; Nakanishi, Y; Wakahara, A; Yoshida, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS
735
TITLE: High temperature chemical compatibility between SiC composites and Be pebbles  Full Text
AUTHORS: Alves, LC ; Paul, A; da Silva, MR ; Aves, E ; Riccardi, B; Soares, JC;
PUBLISHED: 2003, SOURCE: 8th International Conference on Nuclear Microprobe Technology and Applications in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 210
INDEXED IN: Scopus WOS CrossRef
736
TITLE: High temperature implantation of Tm in GaN
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S; Martin, RW; O'Donnell, KP;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS CrossRef: 6
737
TITLE: Implantation and annealing studies of Tm-implanted GaN  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wahl, U ; Monteiro, T ; Dalmasso, S; Martin, RW; O'Donnell, KP; Vianden, R;
PUBLISHED: 2003, SOURCE: Meeting of the European-Materials-Research-Society (EMRS) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 105, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef Handle
738
TITLE: Implantation site of rare earths in single-crystalline ZnO  Full Text
AUTHORS: Wahl, U ; Rita, E; Correia, JG ; Alves, E ; Araújo, JP ; The ISOLDE Collaboration, ;
PUBLISHED: 2003, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 82, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 50
739
TITLE: Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films  Full Text
AUTHORS: Cerqueira, MF ; Stepikhova, M; Losurdo, M; Giangregorio, MM; Alves, E ; Monteiro, T ; Soares, MJ ; Boemare, C;
PUBLISHED: 2003, SOURCE: Conference on Low Dimensional Structures and Devices (LDSD) in MICROELECTRONICS JOURNAL, VOLUME: 34, ISSUE: 5-8
INDEXED IN: Scopus WOS CrossRef Handle
740
TITLE: Influence of ionizing radiation on the electrical behavior of a Be pebble bed  Full Text
AUTHORS: Alves, E ; da Silva, MR ; Alves, LC ; Marques, JG ;
PUBLISHED: 2003, SOURCE: 22nd Symposium on Fusion Technology in FUSION ENGINEERING AND DESIGN, VOLUME: 69, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
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