ProfileOfResearchers

872

TITLE: Radioactive isotope identifications of Au and Pt photoluminescence centres in silicon Full Text
AUTHORS: Henry, MO; Alves, E ; Bollmann, J; Burchard, A; Deicher, M; Fanciulli, M; Forkel Wirth, D; Knopf, MH; Lindner, S; Magerle, R; McGlynn, E; McGuigan, KG; Soares, JC ; Stotzler, A; Weyer, G;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2

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873

TITLE: Solubility and damage annealing of Er implanted single crystalline alpha-Al2O3 Full Text
AUTHORS: Alves, E ; da Silva, RC; da Silva, MF; Soares, JC ;
PUBLISHED: 1998, SOURCE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, ISSUE: 1-4

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874

TITLE: Etching of amorphous Al2O3 produced by ion implantation Full Text
AUTHORS: McHargue, CJ; Hunn, JD; Joslin, DL; Alves, E ; daSilva, MF; Soares, JC ;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

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875

TITLE: Lattice site and photoluminescence of erbium implanted in alpha-A1(2)O(3)
AUTHORS: vandenHoven, GN; Polman, A; Alves, E ; daSilva, MF; Melo, AA; Soares, JC ;
PUBLISHED: 1997, SOURCE: JOURNAL OF MATERIALS RESEARCH, VOLUME: 12, ISSUE: 5

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876

TITLE: Lattice site and photoluminescence of erbium implanted in α–Al2O3
AUTHORS: van den Hoven, GN; Polman, A; Alves, E ; da F d Silva; Melo, AA; Soares, JC;
PUBLISHED: 1997, SOURCE: Journal of Materials Research - J. Mater. Res., VOLUME: 12, ISSUE: 05

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877

TITLE: Microscopic studies of implanted As-73 in diamond Full Text
AUTHORS: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

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878

TITLE: Selective area vapor-phase epitaxy and structural properties of Hg1-xCdxTe on sapphire Full Text
AUTHORS: Sochinskii, NV; Munoz, V; Bernardi, S; Espeso, JI; Alves, E ; daSilva, MF; Soares, JC ; Marin, C; Dieguez, E;
PUBLISHED: 1997, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 179, ISSUE: 3-4

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879

TITLE: Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy Full Text
AUTHORS: Sochinskii, NV; Munoz, V; Bellani, V; Vina, L; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S;
PUBLISHED: 1997, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 70, ISSUE: 10

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880

TITLE: The photoluminescence of Pt-implanted silicon
AUTHORS: Alves, E ; Bollmann, J; Deicher, M; Carmo, MC; Henry, MO; Knopf, MHA; Leitao, JP ; Magerle, R; McDonagh, CJ;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 1

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