881
TITLE: Radiation damage annealing of Hg implanted InP  Full Text
AUTHORS: Correia, JG ; Marques, JG ; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K; Vianden, R;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
882
TITLE: Rutherford backscattering and photoluminescence studies of erbium implanted GaAs
AUTHORS: Daly, SE; Henry, MO; Alves, E ; Soares, JC ; Gwilliam, R; Sealy, BJ; Freitag, K; Vianden, R; Stievenard, D;
PUBLISHED: 1996, SOURCE: Proceedings of the 1996 MRS Spring Symposium in Materials Research Society Symposium - Proceedings, VOLUME: 422
INDEXED IN: Scopus
883
TITLE: Structural properties of CdTe and Hg1-xCdxTe epitaxial layers grown on sapphire substrates  Full Text
AUTHORS: Sochinskii, NV; Soares, JC; Alves, E ; daSilva, MF; Franzosi, P; Bernardi, S; Dieguez, E;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
884
TITLE: Structural properties of Hg1-xMnxTe layers grown on CdTe substrates by liquid phase epitaxy
AUTHORS: Sochinskii, NV; Soares, JC ; Alves, E ; daSilva, MF; Franzosi, P; Dieguez, E;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
885
TITLE: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing (Reprinted from Nuclear Instruments and Methods in Physics B, vol 106, pg 602-605, 1995)
AUTHORS: Marques, JG; Melo, AA; Soares, JC; Alves, E ; daSilva, MF; Freitag, K;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
INDEXED IN: WOS
886
TITLE: Incorporation and stability of erbium in sapphire by ion implantation  Full Text
AUTHORS: Alves, E ; daSilva, MF; vandenHoven, GN; Polman, A; Melo, AA; Soares, JC ;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
887
TITLE: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing  Full Text
AUTHORS: Marques, JG ; Melo, AA; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
888
TITLE: Hyperfine fields of mercury in single-crystalline cobalt  Full Text
AUTHORS: Marques, JG ; Correia, JG ; Melo, AA; Soares, JC; Alves, E ; da Silva, MF;
PUBLISHED: 1994, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 76, ISSUE: 10
INDEXED IN: CrossRef
889
TITLE: HYPERFINE FIELDS OF MERCURY IN SINGLE-CRYSTALLINE COBALT  Full Text
AUTHORS: MARQUES, JG ; CORREIA, JG ; MELO, AA; SOARES, JC ; ALVES, E ; DASILVA, MF;
PUBLISHED: 1994, SOURCE: 6th Joint Magnetism and Magnetic Materials-Intermag Conference in JOURNAL OF APPLIED PHYSICS, VOLUME: 76, ISSUE: 10
INDEXED IN: Scopus WOS
890
TITLE: The lattice site of Au in Be after 24 h 197mHg isotope implantation and decay  Full Text
AUTHORS: Alves, E ; J.G Correia; J.G Marques; A.A Melo; M.F da Silva; J.C Soares; Haas, H;
PUBLISHED: 1994, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 85, ISSUE: 1-4
INDEXED IN: CrossRef
Page 89 of 91. Total results: 904.