The Substitutionality of Hafnium in Sapphire by Ion Implantation and Low Temperature Annealing (Reprinted from Nuclear Instruments and Methods in Physics B, Vol 106, Pg 602-605, 1995)

AuthID
P-001-FAQ
6
Author(s)
Melo, AA
·
Soares, JC
·
Freitag, K
3
Editor(s)
Williams, JS; Elliman, RG; Ridgway, MC
Document Type
Proceedings Paper
Year published
1996
Published
in ION BEAM MODIFICATION OF MATERIALS
Pages: 602-605 (4)
Conference
9Th International Conference on Ion Beam Modification of Materials (Ibmm 95), Date: FEB 05-10, 1995, Location: CANBERRA, AUSTRALIA, Sponsors: Austr Natl Univ, Dept Electr Mat Engn, Acad Pr, Harcourt Brace Jovanovich, Alphatech Int Ltd, Austr Mat Res Soc, Balzers Austr P L, Danfysik A S, Elsevier, High Voltage Engn, IBM Austr, Natl Electrostat Corp, Stanton Sci, Host: AUSTR NATL UNIV
Indexing
Publication Identifiers
Wos: WOS:A1996BG29U00109
Export Publication Metadata
Marked List
Info
At this moment we don't have any links to full text documens.