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901

TITLE: Regrowth of indium-implanted (100), (110) and (111) silicon crystals studied with Rutherford backscattering and perturbed angular correlation techniques Full Text
AUTHORS: Alves, E ; M.F Da Silva; A.A Melo; J.C Soares; Feuser, U; Vianden, R;
PUBLISHED: 1989, SOURCE: Materials Science and Engineering: B, VOLUME: 4, ISSUE: 1-4

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902

TITLE: REGROWTH OF INDIUM-IMPLANTED (100), (110) AND (111) SILICON-CRYSTALS STUDIED WITH RUTHERFORD BACKSCATTERING AND PERTURBED ANGULAR-CORRELATION TECHNIQUES Full Text
AUTHORS: ALVES, E ; DASILVA, MF; MELO, AA; SOARES, JC ; FEUSER, U; VIANDEN, R;
PUBLISHED: 1989, SOURCE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, ISSUE: 1-4

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903

TITLE: LATTICE LOCATION STUDIES ON HAFNIUM, THALLIUM AND LEAD IMPLANTED MAGNESIUM SINGLE CRYSTALS.
AUTHORS: da Silva, MF; da Silva, MR; Alves, E ; Melo, A; Soares, JC ; Winand, J; Vianden, R;
PUBLISHED: 1984, SOURCE: Surface Engineering: Surface Modification of Materials. in NATO ASI Series, Series E: Applied Sciences, ISSUE: 85

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904

TITLE: NEW HAFNIUM-BERYLLIUM SYSTEM PRODUCED BY ION IMPLANTATION AND ANNEALING TECHNIQUES.
AUTHORS: Soares, JC ; Melo, AA; DaSilva, MF; Alves, EJ ; Freitag, K; Vianden, R;
PUBLISHED: 1984, SOURCE: Ion Implantation and Ion Beam Processing of Materials, Symposium. in Materials Research Society Symposia Proceedings, VOLUME: 27

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