571
TITLE: Etching of amorphous Al2O3 produced by ion implantation  Full Text
AUTHORS: McHargue, CJ; Hunn, JD; Joslin, DL; Alves, E ; daSilva, MF; Soares, JC ;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
INDEXED IN: Scopus WOS CrossRef
572
TITLE: Lattice site and photoluminescence of erbium implanted in alpha-A1(2)O(3)
AUTHORS: vandenHoven, GN; Polman, A; Alves, E ; daSilva, MF; Melo, AA; Soares, JC ;
PUBLISHED: 1997, SOURCE: JOURNAL OF MATERIALS RESEARCH, VOLUME: 12, ISSUE: 5
INDEXED IN: Scopus WOS
573
TITLE: Microscopic studies of implanted As-73 in diamond  Full Text
AUTHORS: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
INDEXED IN: Scopus WOS CrossRef
574
TITLE: Selective area vapor-phase epitaxy and structural properties of Hg1-xCdxTe on sapphire  Full Text
AUTHORS: Sochinskii, NV; Munoz, V; Bernardi, S; Espeso, JI; Alves, E ; daSilva, MF; Soares, JC ; Marin, C; Dieguez, E;
PUBLISHED: 1997, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 179, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
575
TITLE: Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy  Full Text
AUTHORS: Sochinskii, NV; Munoz, V; Bellani, V; Vina, L; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S;
PUBLISHED: 1997, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 70, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef
576
TITLE: The photoluminescence of Pt-implanted silicon
AUTHORS: Alves, E ; Bollmann, J; Deicher, M; Carmo, MC; Henry, MO; Knopf, MHA; Leitao, JP ; Magerle, R; McDonagh, CJ;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 1
INDEXED IN: Scopus WOS
577
TITLE: Incorporation and stability of erbium in sapphire by ion implantation
AUTHORS: Alves, E ; daSilva, MF; vandenHoven, GN; Polman, A; Melo, AA; Soares, JC;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
INDEXED IN: WOS
578
TITLE: Ion beam mixing of chromium or zirconium films with sapphire  Full Text
AUTHORS: McHargue, CJ; Joslin, DL; White, CW; daSilva, MF; Alves, E ; Soares, JC ;
PUBLISHED: 1996, SOURCE: 9th International Conference on Surface Modification of Metals by Ion Beams (SMMIB 95) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 83, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
579
TITLE: Laser-assisted recrystallization to improve the surface morphology of CdTe epitaxial layers
AUTHORS: Sochinskii, NV; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S; Garrido, J; AgulloRueda, F;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
580
TITLE: Low temperature epitaxial regrowth of mercury implanted sapphire  Full Text
AUTHORS: Alves, E ; daSilva, MF; Marques, JG ; Correia, JG ; Soares, JC ; Freitag, K;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
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