581
TITLE: Radiation damage annealing of Hg implanted InP  Full Text
AUTHORS: Correia, JG ; Marques, JG ; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K; Vianden, R;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
582
TITLE: Rutherford backscattering and photoluminescence studies of erbium implanted GaAs
AUTHORS: Daly, SE; Henry, MO; Alves, E ; Soares, JC ; Gwilliam, R; Sealy, BJ; Freitag, K; Vianden, R; Stievenard, D;
PUBLISHED: 1996, SOURCE: Proceedings of the 1996 MRS Spring Symposium in Materials Research Society Symposium - Proceedings, VOLUME: 422
INDEXED IN: Scopus
IN MY: ORCID
583
TITLE: Structural properties of CdTe and Hg1-xCdxTe epitaxial layers grown on sapphire substrates  Full Text
AUTHORS: Sochinskii, NV; Soares, JC; Alves, E ; daSilva, MF; Franzosi, P; Bernardi, S; Dieguez, E;
PUBLISHED: 1996, SOURCE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
584
TITLE: Structural properties of Hg1-xMnxTe layers grown on CdTe substrates by liquid phase epitaxy
AUTHORS: Sochinskii, NV; Soares, JC ; Alves, E ; daSilva, MF; Franzosi, P; Dieguez, E;
PUBLISHED: 1996, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
585
TITLE: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing (Reprinted from Nuclear Instruments and Methods in Physics B, vol 106, pg 602-605, 1995)
AUTHORS: Marques, JG; Melo, AA; Soares, JC; Alves, E ; daSilva, MF; Freitag, K;
PUBLISHED: 1996, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
INDEXED IN: WOS
586
TITLE: Incorporation and stability of erbium in sapphire by ion implantation  Full Text
AUTHORS: Alves, E ; daSilva, MF; vandenHoven, GN; Polman, A; Melo, AA; Soares, JC ;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
587
TITLE: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing  Full Text
AUTHORS: Marques, JG ; Melo, AA; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
588
TITLE: HYPERFINE FIELDS OF MERCURY IN SINGLE-CRYSTALLINE COBALT  Full Text
AUTHORS: MARQUES, JG ; CORREIA, JG ; MELO, AA; SOARES, JC ; ALVES, E ; DASILVA, MF;
PUBLISHED: 1994, SOURCE: 6th Joint Magnetism and Magnetic Materials-Intermag Conference in JOURNAL OF APPLIED PHYSICS, VOLUME: 76, ISSUE: 10
INDEXED IN: Scopus WOS
589
TITLE: THE LATTICE SITE OF AU IN BE AFTER 24-H HG-197M ISOTOPE IMPLANTATION AND DECAY  Full Text
AUTHORS: ALVES, E ; CORREIA, JG ; MARQUES, JG ; MELO, AA; DASILVA, MF; SOARES, JC ; HAAS, H;
PUBLISHED: 1994, SOURCE: 11th International Conference on Ion Beam Analysis (IBA-11) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 85, ISSUE: 1-4
INDEXED IN: Scopus WOS
590
TITLE: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As
AUTHORS: Alves, E ; Da Silva, MF; Melo, AA; Soares, JC ; Van Den Hoven, GN; Polman, A; Evans, KR; Jones, CR;
PUBLISHED: 1993, SOURCE: Proceedings of the 1993 Materials Society Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 301
INDEXED IN: Scopus
IN MY: ORCID
Page 59 of 60. Total results: 597.