ProfileOfResearchers

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182

TITLE: Acceptor-hydrogen interaction in InAs
AUTHORS: Burchard, A; Correia, JG ; Deicher, M; Forkel Wirth, D; Magerle, R; Prospero, A; Stotzler, A;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2

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183

TITLE: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900°C
AUTHORS: Wahl, U ; Correia, JG ; Langouche, G; Marques, JG ; Vantomme, A;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 258-263, ISSUE: 9993

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184

TITLE: Direct evidence for tetrahedral interstitial Er in Si
AUTHORS: Wahl, U ; Vantomme, A; DeWachter, J; Moons, R; Langouche, G; Marques, JG ; Correia, JG ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 79, ISSUE: 11

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185

TITLE: Lattice sites and damage annealing of implanted Tm and Er in Si
AUTHORS: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLISHED: 1997, SOURCE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469

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186

TITLE: Microscopic studies of implanted As-73 in diamond Full Text
AUTHORS: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

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187

TITLE: Ion beam channeling and hyperfine interaction analysis for the characterization of stoichiometry and anti-site population in LiNbO3 Full Text
AUTHORS: Kling, A ; Rebouta, L ; Marques, JG ; Correia, JG ; daSilva, MF; Dieguez, E; AgulloLopez, F; Soares, JC ;
PUBLISHED: 1996, SOURCE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, ISSUE: 1-4

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188

TITLE: Low temperature epitaxial regrowth of mercury implanted sapphire Full Text
AUTHORS: Alves, E ; daSilva, MF; Marques, JG ; Correia, JG ; Soares, JC ; Freitag, K;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4

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189

TITLE: Radiation damage annealing of Hg implanted InP Full Text
AUTHORS: Correia, JG ; Marques, JG ; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K; Vianden, R;
PUBLISHED: 1996, SOURCE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, ISSUE: 1-4

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190

TITLE: Radioactive ion beams for solid state research Full Text
AUTHORS: Correia, JG ;
PUBLISHED: 1996, SOURCE: 4th European Conference on Accelerators in Applied Research and Technology (ECAART-4) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 113, ISSUE: 1-4

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