Joaquim Fernando Monteiro Pratas


AuthID: R-000-7HP

Confirmed Publications: 62



51
TITLE: RBS/channeling study of buried Ge quantum dots grown in a Si layer  Full Text
AUTHORS: Fonseca, A; Alves, E ; Barradas, NP ; P. Leitao ; Sobolev, NA; Carmo, MC; Nikiforov, AI; Presting, H;
PUBLISHED: 2006, SOURCE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, ISSUE: 1-2 SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ResearcherID
52
TITLE: High resolution backscattering studies of nanostructured magnetic and semiconducting materials  Full Text
AUTHORS: Fonseca, A; Franco, N; Alves, E ; Barradas, NP ; Leitao, JP ; Sobolev, NA; Banhart, DF; Presting, H; Ulyanov, VV; Nikiforov, AI;
PUBLISHED: 2005, SOURCE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 13
IN MY: ResearcherID
53
TITLE: Low-temperature molecular beam epitaxy of Ge on Si  Full Text
AUTHORS: Leitao, JP ; Fonseca, A; Sobolev, NA; Carmo, MC; Franco, N; Sequeira, AD; Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibeldin, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F;
PUBLISHED: 2005, SOURCE: 2nd International SiGe Technology and Device Meeting (ISTDM) in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 8, ISSUE: 1-3
INDEXED IN: Scopus WOS
IN MY: ResearcherID
54
TITLE: Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures  Full Text
AUTHORS: Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibel'din, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F; Leitao, JP ; Sobolev, NA; Carmo, MC;
PUBLISHED: 2005, SOURCE: Nanophotonics 2004 Workshop in PHYSICS OF THE SOLID STATE, VOLUME: 47, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ResearcherID
55
TITLE: Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer  Full Text
AUTHORS: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLISHED: 2005, SOURCE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, ISSUE: SUPPL.
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ResearcherID
56
TITLE: Structural characterization and luminescence of Ge/Si quantum dots
AUTHORS: Fonseca, A; Sobolev, NA; Leitao, JP ; Carmo, MC; Franco, N; Presting, H; Sequeira, AD;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 1
57
TITLE: Influence of defects on the luminescence of Ge/Si quantum dots  Full Text
AUTHORS: Sobolev, NA; Fonseca, A; Leitao, JP ; Carmo, MC; Presting, H; Kibbel, H;
PUBLISHED: 2003, SOURCE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ResearcherID
58
TITLE: Pulsed laser annealing of Si-Ge superlattices  Full Text
AUTHORS: Sobolev, NA; Ivlev, GD; Gatskevich, EI; Leitao, JP ; Fonseca, A; Carmo, MC; Lopes, AB ; Sharaev, DN; Kibbel, H; Presting, H;
PUBLISHED: 2003, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, VOLUME: 23, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ResearcherID
59
TITLE: Uniaxial stress study of the 1026-meV center in Si:Pt
AUTHORS: Leitao, JP ; Carmo, MC;
PUBLISHED: 2001, SOURCE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 63, ISSUE: 23
INDEXED IN: Scopus
60
TITLE: The 777 meV photoluminescence band in Si : Pt  Full Text
AUTHORS: Leitao, JP ; Carmo, MC; Henry, MO; McGlynn, E; Bolmann, J; Lindner, S;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
INDEXED IN: Scopus WOS
IN MY: ResearcherID
Page 6 of 7. Total results: 62.

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