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TITLE: Ion-beam induced effects in multi-layered semiconductor systems
AUTHORS: Wendler, E; Sobolev, NA; Redondo Cubero, A; Lorenz, K ;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11

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TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E ; Brunner, F; Weyers, M; Lorenz, K ;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13

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TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13

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TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N Full Text
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13

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TITLE: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTHORS: Lorenz, K ; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E ; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T ;
PUBLISHED: 2016, SOURCE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748

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TITLE: Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si (100): local correlation between the morphology and metal content
AUTHORS: Redondo Cubero, A; Galiana, B; Lorenz, K ; Palomares, FJ; Bahena, D; Ballesteros, C; Hernandez Calderon, I; Vazquez, L;
PUBLISHED: 2016, SOURCE: NANOTECHNOLOGY, VOLUME: 27, ISSUE: 44

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TITLE: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers Full Text
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K ; Alves, E ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8

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TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTHORS: Faye, DN; Fialho, M; Magalhaes, S; Alves, E ; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T ; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K ;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379

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TITLE: Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications Full Text
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K ; Alves, E ; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6

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