Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 298



111
TITLE: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD  Full Text
AUTHORS: Smith, MD; Taylor, E; Sadler, TC; Zubialevich, VZ; Lorenz, K ; Li, HN; O'Connell, J; Alves, E ; Holmes, JD; Martin, RW; Parbrook, PJ;
PUBLISHED: 2014, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 2, ISSUE: 29
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
112
TITLE: Doping of Ga2O3 bulk crystals and NWs by ion implantation
AUTHORS: Lorenz, K ; Peres, M; Felizardo, M ; Correia, JG ; Alves, LC; Alves, E ; Lopez, I; Nogales, E; Mendez, B; Piqueras, J; Barbosa, MB; Araujo, JP ; Goncalves, JN; Rodrigues, J; Rino, L; Monteiro, T ; Villora, EG; Shimamura, K;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXED IN: Scopus WOS CrossRef: 15
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
113
TITLE: Errata: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review
AUTHORS: José G Marques ; Katharina Lorenz ;
PUBLISHED: 2014, SOURCE: Optical Engineering - Opt. Eng, VOLUME: 53, ISSUE: 6
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
114
115
TITLE: Europium-doped GaN(Mg): beyond the limits of the light-emitting diode. Europium-doped GaN(Mg): beyond the limits of the light-emitting diode  Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Kappers, MJ; Lorenz, K ; Alves, E; Bockowski, M;
PUBLISHED: 2014, SOURCE: 10th International Conference on Nitride Semiconductors (ICNS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, VOLUME: 11, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | CIÊNCIAVITAE
116
TITLE: Functional nanowires: Synthesis, characterization and applications
AUTHORS: Bianchi Méndez; Katharina Lorenz ; Beatrice Fraboni; Oliver Ambacher;
PUBLISHED: 2014, SOURCE: Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 11, ISSUE: 2
INDEXED IN: Scopus CrossRef
IN MY: ORCID | CIÊNCIAVITAE
117
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E ; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
118
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K ; Alves, E ; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
119
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza-Felip, S; Bellet-Amalric, E; Núñez-Cascajero, A; Wang, Y; M.-P Chauvat; Ruterana, P; Pouget, S; Lorenz, K ; Alves, E ; Monroy, E;
PUBLISHED: 2014, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 116, ISSUE: 23
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
120
TITLE: High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3  Full Text
AUTHORS: Muhammed, MM; Peres, M; Yamashita, Y; Morishima, Y; Sato, S; Franco, N; Lorenz, K ; Kuramata, A; Roqan, IS;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
Page 12 of 30. Total results: 298.

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