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High In-Content Ingan Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics

AuthID
P-00A-2RF

Author(s)

Valdueza Felip, S

Bellet Amalric, E

Nunez Cascajero, A

Wang, Y

Chauvat, MP

Ruterana, P

Pouget, S

Lorenz, K

Alves, E

Monroy, E

Document Type

Article

Year published

2014

Published

in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979

Volume: 116, Issue: 23

Indexing

Wos^®

Google Scholar^®

Publication Identifiers

DOI: 10.1063/1.4903944

Wos: WOS:000346634500013

Source Identifiers

ISSN: 0021-8979

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High In-Content Ingan Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics

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High In-Content Ingan Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics

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