111
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices  Full Text
AUTHORS: Faye, DN; Fialho, M; Magalhaes, S; Alves, E ; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T ; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K ;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
INDEXED IN: Scopus WOS CrossRef
112
TITLE: Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications  Full Text
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K ; Alves, E ; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
INDEXED IN: Scopus WOS CrossRef
113
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K ; Wendler, E; Magalhaes, S; Alves, E ; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
INDEXED IN: Scopus WOS
114
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K ; Wendler, E; Magalhães, S; Alves, E ; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: Nanotechnology, VOLUME: 26, ISSUE: 42
INDEXED IN: CrossRef
115
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents  Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E ; Araujo, JP ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 7
116
TITLE: Indirect excitation of Eu3+ in GaN codoped with Mg and Eu  Full Text
AUTHORS: Yamaga, M; Watanabe, H; Kurahashi, M; O'Donnell, KP; Lorenz, K ; Bockowski, M;
PUBLISHED: 2015, SOURCE: 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) in 6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, VOLUME: 619, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
117
TITLE: Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
AUTHORS: Moreno Barrado, A; Gago, R; Redondo Cubero, A; Vazquez, L; Munoz Garcia, J; Cuerno, R; Lorenz, K ; Castro, M;
PUBLISHED: 2015, SOURCE: EPL, VOLUME: 109, ISSUE: 4
INDEXED IN: Scopus WOS
118
TITLE: Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
AUTHORS: Moreno-Barrado, A; Gago, R; Redondo-Cubero, A; Vázquez, L; Muñoz-García, J; Cuerno, R; Lorenz, K ; Castro, M;
PUBLISHED: 2015, SOURCE: EPL - EPL (Europhysics Letters), VOLUME: 109, ISSUE: 4
INDEXED IN: CrossRef
119
TITLE: Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen  Full Text
AUTHORS: Marco A Sousa; Teresa C Esteves; Nabiha Ben Sedrine; Joana Rodrigues; Marcio B Lourenco; Andres Redondo Cubero; Eduardo Alves ; Kevin P O'Donnell; Michal Bockowski; Christian Wetzel; Maria R Correia; Katharina Lorenz ; Teresa Monteiro ;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
INDEXED IN: Scopus WOS CrossRef: 13
120
TITLE: Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure  Full Text
AUTHORS: Ben Sedrine, N; Esteves, TC; Rodrigues, J; Rino, L; Correia, MR; Sequeira, MC; Neves, AJ; Alves, E ; Bockowski, M; Edwards, PR; O'Donnell, KP; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
INDEXED IN: Scopus WOS CrossRef: 9
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