Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 314



131
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K ; Alves, E ; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
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132
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics  Full Text
AUTHORS: Valdueza-Felip, S; Bellet-Amalric, E; Núñez-Cascajero, A; Wang, Y; M.-P Chauvat; Ruterana, P; Pouget, S; Lorenz, K ; Alves, E ; Monroy, E;
PUBLISHED: 2014, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 116, ISSUE: 23
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
133
TITLE: High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3  Full Text
AUTHORS: Muhammed, MM; Peres, M; Yamashita, Y; Morishima, Y; Sato, S; Franco, N; Lorenz, K ; Kuramata, A; Roqan, IS;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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134
TITLE: Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Jerez, D; Lorenz, K ; Piqueras, J; Alves, E ;
PUBLISHED: 2014, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 47, ISSUE: 35
INDEXED IN: Scopus WOS CrossRef
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135
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review
AUTHORS: Marques, JG ; Lorenz, K ;
PUBLISHED: 2014, SOURCE: OPTICAL ENGINEERING, VOLUME: 53, ISSUE: 6
INDEXED IN: WOS CrossRef
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136
137
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO3: an integrated review
AUTHORS: Marques, JG ; Lorenz, K ;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXED IN: Scopus WOS CrossRef
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138
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO<inf>3</inf>: A review
AUTHORS: Marques, JG ; Lorenz, K ;
PUBLISHED: 2014, SOURCE: Optical Engineering, VOLUME: 53, ISSUE: 6
INDEXED IN: Scopus
IN MY: ORCID | CIÊNCIAVITAE
139
TITLE: Sequential multiple-step europium ion implantation and annealing of GaN. Sequential multiple-step europium ion implantation and annealing of GaN  Full Text
AUTHORS: Miranda, SMC; Edwards, PR; O'Donnell, KP; Bockowski, M; Alves, E ; Roqan, IS; Vantomme, A; Lorenz, K ;
PUBLISHED: 2014, SOURCE: E-MRS Spring Meeting / Symposium J - Semicond Nanostructures towards Elect and Optoelectron Device Applicat - IV / Symposium L - Grp III Nitrides / Symposium P - Funct Nanowires - Synth, Characterizat and Applicat in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, VOLUME: 11, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
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140
TITLE: Structural and optical properties of Ga auto-incorporated InAlN epilayers  Full Text
AUTHORS: Taylor, E; Smith, MD; Sadler, TC; Lorenz, K ; Li, HN; Alves, E ; Parbrook, PJ; Martin, RW;
PUBLISHED: 2014, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 408
INDEXED IN: Scopus WOS CrossRef
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Page 14 of 32. Total results: 314.

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