ProfileOfResearchers

172

TITLE: A Double Scattering Analytical Model For Elastic Recoil Detection Analysis Full Text
AUTHORS: Barradas, NP ; Lorenz, K ; Darakchieva, V; Alves, E ; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

173

TITLE: A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature Full Text
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

174

TITLE: Band gap engineering approaches to increase InGaN/GaN LED efficiency
AUTHORS: Auf Der Maur, M; Di Carlo, A; Lorenz, K ;
PUBLISHED: 2011, SOURCE: 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

INDEXED IN:

Scopus

IN MY:

ORCID |

175

TITLE: Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures Full Text
AUTHORS: Nogales, E; Hidalgo, P; Lorenz, K ; Mendez, B; Piqueras, J; Alves, E ;
PUBLISHED: 2011, SOURCE: NANOTECHNOLOGY, VOLUME: 22, ISSUE: 28

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

176

TITLE: Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
AUTHORS: Peres, M; Magalhaes, S; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: NANOSCALE RESEARCH LETTERS, VOLUME: 6, ISSUE: 1

INDEXED IN:

Scopus

WOS

Handle

IN MY:

ORCID |

177

TITLE: Free electron properties and hydrogen in InN grown by MOVPE Full Text
AUTHORS: Darakchieva, V; Y Xie; Rogalla, D; W Becker; Lorenz, K ; Alves, E ; Ruffenach, S; Moret, M; Briot, O;
PUBLISHED: 2011, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, ISSUE: 5

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

178

TITLE: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study Full Text
AUTHORS: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

179

TITLE: Implanted impurities in wide band gap semiconductors
AUTHORS: Kessler, P; Lorenz, K ; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum, VOLUME: 311

INDEXED IN:

Scopus

IN MY:

ORCID |

180

TITLE: Implanted Impurities in Wide Band Gap Semiconductors
AUTHORS: Keßler, P; Lorenz, K ; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum - DDF, VOLUME: 311

INDEXED IN:

IN MY:

ORCID |