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Katharina Lorenz
AuthID:
R-000-90E
Publications
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Document Source:
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Document Type:
All Document Types
Article (244)
Proceedings Paper (43)
Article in Press (13)
Review (6)
Correction (4)
Editorial Material (2)
Erratum (1)
Book Chapter (1)
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Confirmed Publications: 314
171
TITLE:
High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry
Full Text
AUTHORS:
Magalhaes, S;
Barradas, NP
;
Alves, E
; Watson, IM;
Lorenz, K
;
PUBLISHED:
2012
,
SOURCE:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
VOLUME:
273
INDEXED IN:
Scopus
WOS
IN MY:
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CIÊNCIAVITAE
172
TITLE:
High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry
Full Text
AUTHORS:
Magalhães, S; N.P Barradas;
Alves, E
; I.M Watson;
Lorenz, K
;
PUBLISHED:
2012
,
SOURCE:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
VOLUME:
273
INDEXED IN:
CrossRef
IN MY:
ORCID
|
CIÊNCIAVITAE
173
TITLE:
High pressure annealing of Europium implanted GaN
AUTHORS:
Lorenz, K
;
Miranda, SMC
;
Alves, E
; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLISHED:
2012
,
SOURCE:
Conference on Gallium Nitride Materials and Devices VII
in
GALLIUM NITRIDE MATERIALS AND DEVICES VII,
VOLUME:
8262
INDEXED IN:
Scopus
WOS
CrossRef
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174
TITLE:
Influence of neutron irradiation and annealing on the optical properties of GaN
Full Text
AUTHORS:
Rodrigues, J; Peres, M; Soares, MJ;
Lorenz, K
;
Marques, JG
;
Neves, AJ
;
Monteiro, T
;
PUBLISHED:
2012
,
SOURCE:
Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS)
in
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4,
VOLUME:
9,
ISSUE:
3-4
INDEXED IN:
Scopus
WOS
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ORCID
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CIÊNCIAVITAE
175
TITLE:
Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS:
Redondo Cubero, A
; Brandt, M; Henneberger, F;
Alves, E
;
Lorenz, K
;
PUBLISHED:
2012
,
SOURCE:
Conference on Oxide-Based Materials and Devices III
in
OXIDE-BASED MATERIALS AND DEVICES III,
VOLUME:
8263
INDEXED IN:
Scopus
WOS
IN MY:
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CIÊNCIAVITAE
176
TITLE:
Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS:
Redondo-Cubero, A
; Brandt, M; Henneberger, F;
Alves, E
;
Lorenz, K
;
PUBLISHED:
2012
,
SOURCE:
Oxide-based Materials and Devices III
INDEXED IN:
CrossRef
IN MY:
ORCID
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CIÊNCIAVITAE
177
TITLE:
Ion implantation of Cd and Ag into AlN and GaN
Full Text
AUTHORS:
Miranda, SMC; Kessler, P;
Correia, JG
; Vianden, R; Johnston, K;
Alves, E
;
Lorenz, K
;
PUBLISHED:
2012
,
SOURCE:
Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS)
in
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4,
VOLUME:
9,
ISSUE:
3-4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
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|
CIÊNCIAVITAE
178
TITLE:
It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting
Full Text
AUTHORS:
O'Donnell, KP
; Auf der Maur, M;
Di Carlo, A
;
Lorenz, K
;
the SORBET consortium,
;
PUBLISHED:
2012
,
SOURCE:
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,
VOLUME:
6,
ISSUE:
2
INDEXED IN:
Scopus
WOS
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CIÊNCIAVITAE
179
TITLE:
Mechanisms of damage formation in Eu-implanted AlN
Full Text
AUTHORS:
Leclerc, S; Lacroix, B; Declemy, A;
Lorenz, K
;
Ruterana, P
;
PUBLISHED:
2012
,
SOURCE:
JOURNAL OF APPLIED PHYSICS,
VOLUME:
112,
ISSUE:
7
INDEXED IN:
Scopus
WOS
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CIÊNCIAVITAE
180
TITLE:
Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions
Full Text
AUTHORS:
Fialho, M;
Lorenz, K
;
Magalhaes, S
;
Redondo Cubero, A
;
Rodrigues, J
;
Santos, NF
;
Monteiro, T
;
Alves, E
;
PUBLISHED:
2012
,
SOURCE:
19th International Conference on Ion Implantation Technology (IIT)
in
ION IMPLANTATION TECHNOLOGY 2012,
VOLUME:
1496
INDEXED IN:
Scopus
WOS
CrossRef
:
3
IN MY:
ORCID
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ResearcherID
|
CIÊNCIAVITAE
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