171
TITLE: High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry  Full Text
AUTHORS: Magalhaes, S; Barradas, NP ; Alves, E ; Watson, IM; Lorenz, K ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS
172
TITLE: High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry  Full Text
AUTHORS: Magalhães, S; N.P Barradas; Alves, E ; I.M Watson; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273
INDEXED IN: CrossRef
173
TITLE: High pressure annealing of Europium implanted GaN
AUTHORS: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLISHED: 2012, SOURCE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262
INDEXED IN: Scopus WOS CrossRef
174
TITLE: Influence of neutron irradiation and annealing on the optical properties of GaN  Full Text
AUTHORS: Rodrigues, J; Peres, M; Soares, MJ; Lorenz, K ; Marques, JG ; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef Handle
175
TITLE: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS: Redondo Cubero, A; Brandt, M; Henneberger, F; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
INDEXED IN: Scopus WOS
176
TITLE: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS: Redondo-Cubero, A; Brandt, M; Henneberger, F; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Oxide-based Materials and Devices III
INDEXED IN: CrossRef
177
TITLE: Ion implantation of Cd and Ag into AlN and GaN  Full Text
AUTHORS: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
178
TITLE: It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting  Full Text
AUTHORS: O'Donnell, KP; Auf der Maur, M; Di Carlo, A; Lorenz, K ; the SORBET consortium, ;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, VOLUME: 6, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
179
TITLE: Mechanisms of damage formation in Eu-implanted AlN  Full Text
AUTHORS: Leclerc, S; Lacroix, B; Declemy, A; Lorenz, K ; Ruterana, P;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 112, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
180
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions  Full Text
AUTHORS: Fialho, M; Lorenz, K ; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
INDEXED IN: Scopus WOS CrossRef: 3
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