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192

TITLE: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study Full Text
AUTHORS: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336

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193

TITLE: Implanted impurities in wide band gap semiconductors
AUTHORS: Kessler, P; Lorenz, K ; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum, VOLUME: 311

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194

TITLE: Implanted Impurities in Wide Band Gap Semiconductors
AUTHORS: Keßler, P; Lorenz, K ; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum - DDF, VOLUME: 311

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195

TITLE: Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction
AUTHORS: Lacroix, B; Leclerc, S; Declemy, A; Lorenz, K ; Alves, E ; Ruterana, P;
PUBLISHED: 2011, SOURCE: EPL, VOLUME: 96, ISSUE: 4

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196

TITLE: Radiation damage formation and annealing in GaN and ZnO
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940

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197

TITLE: Rapid thermal annealing of rare earth implanted ZnO epitaxial layers Full Text
AUTHORS: Miranda, SMC; Peres, M; Monteiro, T ; Alves, E ; Sun, HD; Geruschke, T; Vianden, R; Lorenz, K ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7

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