Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 298



211
TITLE: Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers  Full Text
AUTHORS: Margarida M Bola; Correia, MR ; Pereira, S ; Gonzalez, JC; Lorenz, K ; Alves, E ; Barradas, N ;
PUBLISHED: 2010, SOURCE: Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, VOLUME: 7, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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212
TITLE: Alloy and lattice disorder in Hf implanted  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz ; Reiner Vianden;
PUBLISHED: 2009, SOURCE: Physica B: Condensed Matter, VOLUME: 404, ISSUE: 23-24
INDEXED IN: CrossRef
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213
TITLE: Alloy and lattice disorder in Hf implanted AlxGa1-xN (0 <= x <= 1)  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz ; Reiner Vianden;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS
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214
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures  Full Text
AUTHORS: Redondo Cubero, A ; Lorenz, K ; Gago, R; Franco, N; Fernandez Garrido, S; Smulders, PJM; Munoz, E; Calleja, E; Watson, IM; Alves, E ;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 95, ISSUE: 5
INDEXED IN: Scopus WOS
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215
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K ; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E ;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
INDEXED IN: CrossRef
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216
TITLE: Europium doping of zincblende GaN by ion implantation  Full Text
AUTHORS: Lorenz, K ; Roqan, IS; Franco, N; O'Donnell, KP; Darakchieva, V; Alves, E ; Trager Cowan, C; Martin, RW; As, DJ; Panfilova, M;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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217
TITLE: Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling  Full Text
AUTHORS: Redondo Cubero, A ; Lorenz, K ; Franco, N; Fernandez Garrido, S; Gago, R; Smulders, PJM; Munoz, E; Calleja, E; Alves, E ;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 6
INDEXED IN: Scopus WOS
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218
TITLE: Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K ; Franco, N; Fernández-Garrido, S; Gago, R; Smulders, PJM; Muñoz, E; Calleja, E; Alves, E ;
PUBLISHED: 2009, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 42, ISSUE: 6
INDEXED IN: CrossRef
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219
TITLE: Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0 <= x <= 1) alloys  Full Text
AUTHORS: Peres, M; Magalhaes, S; Franco, N; Soares, MJ ; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2009, SOURCE: Symposium on Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications held at the 2008 E-MRS Conference in MICROELECTRONICS JOURNAL, VOLUME: 40, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef Handle
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220
TITLE: Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers  Full Text
AUTHORS: Tasco, V; Campa, A; Tarantini, I; Passaseo, A; Gonzalez Posada, F; Redondo Cubero, A ; Lorenz, K ; Franco, N; Munoz, E;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
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Page 22 of 30. Total results: 298.

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