Influence of the Aln Molar Fraction on the Structural and Optical Properties of Praseodymium-Doped Alxga1-Xn (0 <= X <= 1) Alloys

AuthID
 P-003-NKF
8
Author(s)
Document Type
Article
Year published
2009
Published
in MICROELECTRONICS JOURNAL, ISSN: 0026-2692
Volume: 40, Issue: 2, Pages: 377-380 (4)
Conference
Symposium on Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications Held at the 2008 E-Mrs Conference, Date: MAY, 2008, Location: Strasbourg, FRANCE, Sponsors: European Mat Res Soc
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Wos®
Scopus®
Crossref®13
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-58749106418
Wos: WOS:000263695100053
Source Identifiers
ISSN: 0026-2692
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