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261

TITLE: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTHORS: Hernández, S; Cuscó, R; Artús, L; Nogales, E; R.W Martin; K.P O’Donnell; Halambalakis, G; Briot, O; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7

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262

TITLE: Optical and structural studies in Eu-implanted AlN films Full Text
AUTHORS: Peres, M; Cruz, A; Soares, MJ ; Neves, AJ ; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6

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263

TITLE: Optical doping of AlN by rare earth implantation Full Text
AUTHORS: Lorenz, K ; Alves, E ; Monteiro, T ; Soares, MJ ; Peres, M; Smulders, PJM;
PUBLISHED: 2006, SOURCE: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 242, ISSUE: 1-2

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264

TITLE: Optical properties of high-temperature annealed Eu-implanted GaN Full Text
AUTHORS: Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7

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265

TITLE: Rare earth ion implantation in GaN: Damage formation and recovery
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 35th International School on the Physics of Semiconducting Compounds in ACTA PHYSICA POLONICA A, VOLUME: 110, ISSUE: 2

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266

TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7

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267

TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7

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268

TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7

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269