Structure and Role of Ultrathin Aln Layers for Improving Optical Activation of Rare Earth Implanted Gan

AuthID
 P-004-KKA
8
Author(s)
Bodiou, L
·
Braud, A
·
Document Type
Article
Year published
2006
Published
in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN: 0370-1972
Volume: 243, Issue: 7, Pages: 1541-1544 (4)
Conference
6Th International Conference on Nitride Semiconductors (Icns-6), Date: AUG 28-SEP 02, 2005, Location: Bremen, GERMANY
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Publication Identifiers
Scopus: 2-s2.0-33745759455
Wos: WOS:000238752200027
Source Identifiers
ISSN: 0370-1972
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