Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 314



281
TITLE: Rare earth ion implantation in GaN: Damage formation and recovery
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 35th International School on the Physics of Semiconducting Compounds in ACTA PHYSICA POLONICA A, VOLUME: 110, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | CIÊNCIAVITAE
282
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
283
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
284
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
285
286
TITLE: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer  Full Text
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
287
288
TITLE: UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers  Full Text
AUTHORS: Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
289
TITLE: Damage formation and annealing at low temperatures in ion implanted ZnO  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wendler, E; Bilani, O; Wesch, W; Hayes, M;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
290
TITLE: Selectively excited photoluminescence from Eu-implanted GaN  Full Text
AUTHORS: Wang, K; Martin, RW; O'Donnell, KP; Katchkanov, V; Nogales, E; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
Page 29 of 32. Total results: 314.

footer slogan

Useful Links

Get Help

© 2026 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service