Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



101
TITLE: Optical properties of high-temperature annealed Eu-implanted GaN  Full Text
AUTHORS: Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef
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102
TITLE: Rare earth ion implantation in GaN: Damage formation and recovery
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 35th International School on the Physics of Semiconducting Compounds in ACTA PHYSICA POLONICA A, VOLUME: 110, ISSUE: 2
INDEXED IN: Scopus WOS
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103
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7
INDEXED IN: Scopus WOS
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104
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS
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105
TITLE: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer  Full Text
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
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106
107
TITLE: UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers  Full Text
AUTHORS: Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
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108
TITLE: Damage formation and annealing at low temperatures in ion implanted ZnO  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wendler, E; Bilani, O; Wesch, W; Hayes, M;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef
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109
TITLE: Selectively excited photoluminescence from Eu-implanted GaN  Full Text
AUTHORS: Wang, K; Martin, RW; O'Donnell, KP; Katchkanov, V; Nogales, E; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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110
TITLE: The atomic structure of defects formed during doping of GaN with rare earth ions  Full Text
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
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Page 11 of 13. Total results: 129.

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